About: Electron and hole traps in X-ray irradiated Y2SiO5 and Lu2SiO5 crystals     Goto   Sponge   NotDistinct   Permalink

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  • Characteristics of thermally stimulated luminescence (TSL) are studied for the X-ray irradiated at 4, 80, or 295K nominally undoped Y2SiO5 and Lu2SiO5 single crystals of different origin, containing traps for holes (Ce3+, Tb3+ ions) and electrons (Eu3+, Mo6+ ions), as well as for the Sm3+ -doped Lu2SiO5 crystal.
  • Characteristics of thermally stimulated luminescence (TSL) are studied for the X-ray irradiated at 4, 80, or 295K nominally undoped Y2SiO5 and Lu2SiO5 single crystals of different origin, containing traps for holes (Ce3+, Tb3+ ions) and electrons (Eu3+, Mo6+ ions), as well as for the Sm3+ -doped Lu2SiO5 crystal. (en)
Title
  • Electron and hole traps in X-ray irradiated Y2SiO5 and Lu2SiO5 crystals
  • Electron and hole traps in X-ray irradiated Y2SiO5 and Lu2SiO5 crystals (en)
skos:prefLabel
  • Electron and hole traps in X-ray irradiated Y2SiO5 and Lu2SiO5 crystals
  • Electron and hole traps in X-ray irradiated Y2SiO5 and Lu2SiO5 crystals (en)
skos:notation
  • RIV/68378271:_____/14:00432352!RIV15-GA0-68378271
http://linked.open...avai/riv/aktivita
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  • I, P(GAP204/12/0805)
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  • 4
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  • 14166
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  • RIV/68378271:_____/14:00432352
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  • carrier trapping; oxyorthosilicates; thermally stimulated luminescence (en)
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  • DE - Spolková republika Německo
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  • [3AB20D25C793]
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  • Physica Status Solidi B-Basic Solid State Physics
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  • 251
http://linked.open...iv/tvurceVysledku
  • Nikl, Martin
  • Laguta, Valentyn
  • Zazubovich, S.
  • Kärner, T.
http://linked.open...ain/vavai/riv/wos
  • 000334841500003
issn
  • 0370-1972
number of pages
http://bibframe.org/vocab/doi
  • 10.1002/pssb.201350028
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