About: Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We present our recent study on SnS particles in the backdrop of significant developements that have taken place so far for which a review of the present status of this material, its structural, optical, electronic characteristics, and device performence is described. To further improve the performance of low-cost chalcogenide-based solar cells, we propose to employ a third-generation solar cells fabrication scheme, where an intermediate bandgap layer can be incorporated in a CIS solar cell to increase its current generation and efficiency. For this purpose SnS quantum dots (QD) embedded indium sulfide layer is developed. We address how to cap the QD surface for defect passivation and protection from ambient and the doping nature of the particles. We present our recent study on SnS particles in the backdrop of significant developements that have taken place so far for which a review of the present status of this material, its structural, optical, electronic characteristics, and device performence is described. To further improve the performance of low-cost chalcogenide-based solar cells, we propose to employ a third-generation solar cells fabrication scheme, where an intermediate bandgap layer can be incorporated in a CIS solar cell to increase its current generation and efficiency. For this purpose SnS quantum dots (QD) embedded indium sulfide layer is developed. We address how to cap the QD surface for defect passivation and protection from ambient and the doping nature of the particles. (en)
Title	Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping (en)
skos:prefLabel	Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping (en)
skos:notation	RIV/68378271:_____/14:00432332!RIV15-GA0-68378271
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GA13-25747S), P(LM2011026)
http://linked.open...iv/cisloPeriodika	7
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Hývl, Matěj Fejfar, Antonín Vetushka, Aliaksi
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	16297
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/14:00432332
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	chalcogenides; chemical bath deposition; core-shell particles; quantum dots; solar cells; tin sulfide (en)
http://linked.open.../riv/klicoveSlovo	chalcogenides solar cells chemical bath deposition quantum dots core-shell particles tin sulfide
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[EFA6630A0535]
http://linked.open...i/riv/nazevZdroje	Physica Status Solidi B-Basic Solid State Physics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Laboratory of nanstructures and nanomaterials Nanoobjekty ternárních silicid-germanidů přechodných kovů pro využití ve fotovoltaice: morfologie, strukturní a fázové vztahy, fyzikální vlastnosti
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	251
http://linked.open...iv/tvurceVysledku	Fejfar, Antonín Vetushka, Aliaksi Nanu, M. Prastani, C. Rath, J. K. Schropp, R. E. I. Hývl, Matěj Nanu, D. E.
http://linked.open...ain/vavai/riv/wos	000339665200003
issn	0370-1972
number of pages	13 (xsd:int)
http://bibframe.org/vocab/doi	10.1002/pssb.201350377

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