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  • In this paper, we demonstrate the use of atomic force microscopy (AFM) with a conductive cantilever to study local electronic properties of silicon ­nanostructures: p-i-n radial junctions of amorphous Si grown on Si nanowires. We have observed variations of the conductivity of the radial junction ­solar cells based on Si nanowires. Finally, we discuss possibilities of comparing the local photoresponse to local photovoltaic conversion efficiency.
  • In this paper, we demonstrate the use of atomic force microscopy (AFM) with a conductive cantilever to study local electronic properties of silicon ­nanostructures: p-i-n radial junctions of amorphous Si grown on Si nanowires. We have observed variations of the conductivity of the radial junction ­solar cells based on Si nanowires. Finally, we discuss possibilities of comparing the local photoresponse to local photovoltaic conversion efficiency. (en)
Title
  • AFM measurements of novel solar cells. Studying electronic properties of Si-based radial junctions
  • AFM measurements of novel solar cells. Studying electronic properties of Si-based radial junctions (en)
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  • AFM measurements of novel solar cells. Studying electronic properties of Si-based radial junctions
  • AFM measurements of novel solar cells. Studying electronic properties of Si-based radial junctions (en)
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  • RIV/68378271:_____/14:00432247!RIV15-GA0-68378271
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  • I, P(GA13-12386S), P(GA13-25747S), P(LM2011026)
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  • 1
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  • 1809
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  • RIV/68378271:_____/14:00432247
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  • AFM measurements; conductive cantilever; electronic properties; nanowires; PF TUNA (en)
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  • DE - Spolková republika Německo
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  • [745A30EF57C2]
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  • G.I.T. Imaging and Microscopy
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  • Hývl, Matěj
issn
  • 1439-4243
number of pages
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