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| rdf:type
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| Description
| - Epitaxial growth of InAs on semi-insulating GaAs was a subject of various attempts to reduce the influence of the 7% lattice mismatch on the InAs layer properties. The most cost effective and promising method appears to be the growth of low temperature buffer (LTB) InAs layer at 400 °C followed by a thick InAs layer at 600 °C. There is a scarcity of available information about the structural properties of the LTB layers, their background conductivity type and level of doping. We have found that a predominant part of the threading dislocations generated at the interface annihilate within the first 400 nm. The average misfit dislocation spacing is 6.15 nm, proving that the LTB InAs/GaAs interface is nearly completely relaxed. XRD measurements have revealed a well pronounced deformation decrease in the LTB layers for thicknesses above 300 nm. The LTB InAs layer is n-type with carrier concentration of the order of 51016 cm-3 and can be additionally doped with Te and hence can serve as a bottom contact layer. The morphology of unintentionally doped InAs layer grown at 600 °C upon the LTB shows sub-nanometer flatness and carrier concentration of the order of 51015 cm -3
- Epitaxial growth of InAs on semi-insulating GaAs was a subject of various attempts to reduce the influence of the 7% lattice mismatch on the InAs layer properties. The most cost effective and promising method appears to be the growth of low temperature buffer (LTB) InAs layer at 400 °C followed by a thick InAs layer at 600 °C. There is a scarcity of available information about the structural properties of the LTB layers, their background conductivity type and level of doping. We have found that a predominant part of the threading dislocations generated at the interface annihilate within the first 400 nm. The average misfit dislocation spacing is 6.15 nm, proving that the LTB InAs/GaAs interface is nearly completely relaxed. XRD measurements have revealed a well pronounced deformation decrease in the LTB layers for thicknesses above 300 nm. The LTB InAs layer is n-type with carrier concentration of the order of 51016 cm-3 and can be additionally doped with Te and hence can serve as a bottom contact layer. The morphology of unintentionally doped InAs layer grown at 600 °C upon the LTB shows sub-nanometer flatness and carrier concentration of the order of 51015 cm -3 (en)
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| Title
| - Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates
- Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates (en)
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| skos:prefLabel
| - Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates
- Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates (en)
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| skos:notation
| - RIV/68378271:_____/14:00428421!RIV15-GA0-68378271
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| http://linked.open...avai/riv/aktivita
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| http://linked.open...avai/riv/aktivity
| - I, P(7AMB12GR034), P(GA13-15286S)
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| http://linked.open...iv/cisloPeriodika
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| http://linked.open...vai/riv/dodaniDat
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| http://linked.open...aciTvurceVysledku
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| http://linked.open.../riv/druhVysledku
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| http://linked.open...iv/duvernostUdaju
| |
| http://linked.open...titaPredkladatele
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| http://linked.open...dnocenehoVysledku
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| http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/14:00428421
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| http://linked.open...riv/jazykVysledku
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| http://linked.open.../riv/klicovaSlova
| - Structuralproperties; MOVPE; PLcharacterization (en)
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| http://linked.open.../riv/klicoveSlovo
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| http://linked.open...odStatuVydavatele
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| http://linked.open...ontrolniKodProRIV
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| http://linked.open...i/riv/nazevZdroje
| - Journal of Crystal Growth
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| http://linked.open...in/vavai/riv/obor
| |
| http://linked.open...ichTvurcuVysledku
| |
| http://linked.open...cetTvurcuVysledku
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| http://linked.open...vavai/riv/projekt
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| http://linked.open...UplatneniVysledku
| |
| http://linked.open...iv/tvurceVysledku
| - Hulicius, Eduard
- Pangrác, Jiří
- Pacherová, Oliva
- Vaniš, Jan
- Karakostas, Th.
- Komninou, Ph.
- Gladkov, Petar
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| http://linked.open...ain/vavai/riv/wos
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| issn
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| number of pages
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| http://bibframe.org/vocab/doi
| - 10.1016/j.jcrysgro.2014.03.031
|
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