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Description
| - We show both theoretically and experimentally the existence of a complete band gap in a phononic crystal (PnC) constituted by periodical air holes drilled in a solid bi-layer slab. The composite slab is formed with an aluminum nitride (AlN) layer deposited on a titanium nitride (TiN) thin metallic film. Indeed, AlN slabs are of great interest in many technological applications, in particular, owing to the capabilities of AlN as a complementary metal-oxide-semiconductor compatible material for integration in piezoelectric radio frequency filters (thin-film bulk acoustic resonator technology). The TiN layer was chosen as a buffer to enable small lattice mismatch with AlN, thus resulting in highly c-axis oriented and low stresses at the interface.
- We show both theoretically and experimentally the existence of a complete band gap in a phononic crystal (PnC) constituted by periodical air holes drilled in a solid bi-layer slab. The composite slab is formed with an aluminum nitride (AlN) layer deposited on a titanium nitride (TiN) thin metallic film. Indeed, AlN slabs are of great interest in many technological applications, in particular, owing to the capabilities of AlN as a complementary metal-oxide-semiconductor compatible material for integration in piezoelectric radio frequency filters (thin-film bulk acoustic resonator technology). The TiN layer was chosen as a buffer to enable small lattice mismatch with AlN, thus resulting in highly c-axis oriented and low stresses at the interface. (en)
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Title
| - Hypersonic band gap in an AlN-TiN bilayer phononic crystal slab
- Hypersonic band gap in an AlN-TiN bilayer phononic crystal slab (en)
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skos:prefLabel
| - Hypersonic band gap in an AlN-TiN bilayer phononic crystal slab
- Hypersonic band gap in an AlN-TiN bilayer phononic crystal slab (en)
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skos:notation
| - RIV/68378271:_____/14:00427123!RIV15-AV0-68378271
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/14:00427123
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - band gap; III-V semiconductors; AIN films; photonic bandgap materials; thin film deposition; band structure; surface acoustic waves; bulk materials (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Mortet, Vincent
- Soltani, A.
- Akjouj, A.
- Djafari-Rouhani, B.
- El Hassouani, Y.
- Hemon, S.
- Pennec, Y.
- Talbi, A.
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http://linked.open...ain/vavai/riv/wos
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issn
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number of pages
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http://bibframe.org/vocab/doi
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