About: Hypersonic band gap in an AlN-TiN bilayer phononic crystal slab     Goto   Sponge   NotDistinct   Permalink

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  • We show both theoretically and experimentally the existence of a complete band gap in a phononic crystal (PnC) constituted by periodical air holes drilled in a solid bi-layer slab. The composite slab is formed with an aluminum nitride (AlN) layer deposited on a titanium nitride (TiN) thin metallic film. Indeed, AlN slabs are of great interest in many technological applications, in particular, owing to the capabilities of AlN as a complementary metal-oxide-semiconductor compatible material for integration in piezoelectric radio frequency filters (thin-film bulk acoustic resonator technology). The TiN layer was chosen as a buffer to enable small lattice mismatch with AlN, thus resulting in highly c-axis oriented and low stresses at the interface.
  • We show both theoretically and experimentally the existence of a complete band gap in a phononic crystal (PnC) constituted by periodical air holes drilled in a solid bi-layer slab. The composite slab is formed with an aluminum nitride (AlN) layer deposited on a titanium nitride (TiN) thin metallic film. Indeed, AlN slabs are of great interest in many technological applications, in particular, owing to the capabilities of AlN as a complementary metal-oxide-semiconductor compatible material for integration in piezoelectric radio frequency filters (thin-film bulk acoustic resonator technology). The TiN layer was chosen as a buffer to enable small lattice mismatch with AlN, thus resulting in highly c-axis oriented and low stresses at the interface. (en)
Title
  • Hypersonic band gap in an AlN-TiN bilayer phononic crystal slab
  • Hypersonic band gap in an AlN-TiN bilayer phononic crystal slab (en)
skos:prefLabel
  • Hypersonic band gap in an AlN-TiN bilayer phononic crystal slab
  • Hypersonic band gap in an AlN-TiN bilayer phononic crystal slab (en)
skos:notation
  • RIV/68378271:_____/14:00427123!RIV15-AV0-68378271
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • I
http://linked.open...iv/cisloPeriodika
  • 6
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
  • Mortet, Vincent
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 20155
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/14:00427123
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • band gap; III-V semiconductors; AIN films; photonic bandgap materials; thin film deposition; band structure; surface acoustic waves; bulk materials (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [8FB22FC91B54]
http://linked.open...i/riv/nazevZdroje
  • Applied Physics Letters
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 104
http://linked.open...iv/tvurceVysledku
  • Mortet, Vincent
  • Soltani, A.
  • Akjouj, A.
  • Djafari-Rouhani, B.
  • El Hassouani, Y.
  • Hemon, S.
  • Pennec, Y.
  • Talbi, A.
http://linked.open...ain/vavai/riv/wos
  • 000331803800067
issn
  • 0003-6951
number of pages
http://bibframe.org/vocab/doi
  • 10.1063/1.4864310
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