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  • ZnO films with thickness of 80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO.
  • ZnO films with thickness of 80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO. (en)
Title
  • Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition
  • Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition (en)
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  • Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition
  • Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition (en)
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  • RIV/68378271:_____/13:00431501!RIV15-GA0-68378271
http://linked.open...avai/riv/aktivita
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  • I, P(GAP108/11/0958), P(LH12173), P(MEB101102), S
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  • suppl. 1
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  • 78469
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  • RIV/68378271:_____/13:00431501
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  • defects; hydrogen; positron annihilation; thin films; ZnO (en)
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  • NL - Nizozemsko
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  • [4B41449367CD]
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  • Journal of Alloys and Compounds
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  • 580
http://linked.open...iv/tvurceVysledku
  • Anwand, W.
  • Brauer, G.
  • Lančok, Ján
  • Novotný, Michal
  • Bulíř, Jiří
  • Vlček, M.
  • Lukáč, F.
  • Čížek, J.
  • Connolly, J.
  • Krishnamurthy, S.
  • McCarthy, E.
  • Mosnier, J.-P.
  • Melikhova, O.
http://linked.open...ain/vavai/riv/wos
  • 000328172400012
issn
  • 0925-8388
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.jallcom.2013.01.121
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