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Description
| - Surface structure of the free-standing GaN substrates with polar (000-1), non-polar (1-100), (11-20), and semipolar (20-21) surface plane were investigated. Clean polar and non-polar GaN surfaces were prepared by annealing under NH3 atmosphere. (1x1) diffraction patterns were observed by low-energy electron diffraction (LEED) for both polar and nonpolar GaN surfaces. The polar GaN surface was found well-ordered, while the non-polar GaN surfaces were found less ordered with atomic steps on the surface. Polar angle dependences of the photoelecton diffraction (PED) intensities exited by MgKα radiation from N 1s level were analyzed for all the GaN surfaces, aiming to determine the polarities of the GaN surfaces with polar and semipolar crystal orientations.
- Surface structure of the free-standing GaN substrates with polar (000-1), non-polar (1-100), (11-20), and semipolar (20-21) surface plane were investigated. Clean polar and non-polar GaN surfaces were prepared by annealing under NH3 atmosphere. (1x1) diffraction patterns were observed by low-energy electron diffraction (LEED) for both polar and nonpolar GaN surfaces. The polar GaN surface was found well-ordered, while the non-polar GaN surfaces were found less ordered with atomic steps on the surface. Polar angle dependences of the photoelecton diffraction (PED) intensities exited by MgKα radiation from N 1s level were analyzed for all the GaN surfaces, aiming to determine the polarities of the GaN surfaces with polar and semipolar crystal orientations. (en)
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Title
| - Surface analysis of free-standing GaN substrates with polar, nonpolar,and semipolar crystal orientations
- Surface analysis of free-standing GaN substrates with polar, nonpolar,and semipolar crystal orientations (en)
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skos:prefLabel
| - Surface analysis of free-standing GaN substrates with polar, nonpolar,and semipolar crystal orientations
- Surface analysis of free-standing GaN substrates with polar, nonpolar,and semipolar crystal orientations (en)
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skos:notation
| - RIV/68378271:_____/13:00425133!RIV14-AV0-68378271
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http://linked.open...avai/predkladatel
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/13:00425133
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - surface structure; non-polar GaN; semipolar GaN; LEED; photoelectron diffraction; crystal polarity (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - Gallium Nitride Materials and Devices VIII
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Jiříček, Petr
- Romanyuk, Olexandr
- Paskova, T.
- Bartoš, Igor
- Mutombo, Pingo
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http://linked.open...vavai/riv/typAkce
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http://linked.open...ain/vavai/riv/wos
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http://linked.open.../riv/zahajeniAkce
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issn
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number of pages
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http://bibframe.org/vocab/doi
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http://purl.org/ne...btex#hasPublisher
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https://schema.org/isbn
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