About: Surface analysis of free-standing GaN substrates with polar, nonpolar,and semipolar crystal orientations     Goto   Sponge   NotDistinct   Permalink

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  • Surface structure of the free-standing GaN substrates with polar (000-1), non-polar (1-100), (11-20), and semipolar (20-21) surface plane were investigated. Clean polar and non-polar GaN surfaces were prepared by annealing under NH3 atmosphere. (1x1) diffraction patterns were observed by low-energy electron diffraction (LEED) for both polar and nonpolar GaN surfaces. The polar GaN surface was found well-ordered, while the non-polar GaN surfaces were found less ordered with atomic steps on the surface. Polar angle dependences of the photoelecton diffraction (PED) intensities exited by MgKα radiation from N 1s level were analyzed for all the GaN surfaces, aiming to determine the polarities of the GaN surfaces with polar and semipolar crystal orientations.
  • Surface structure of the free-standing GaN substrates with polar (000-1), non-polar (1-100), (11-20), and semipolar (20-21) surface plane were investigated. Clean polar and non-polar GaN surfaces were prepared by annealing under NH3 atmosphere. (1x1) diffraction patterns were observed by low-energy electron diffraction (LEED) for both polar and nonpolar GaN surfaces. The polar GaN surface was found well-ordered, while the non-polar GaN surfaces were found less ordered with atomic steps on the surface. Polar angle dependences of the photoelecton diffraction (PED) intensities exited by MgKα radiation from N 1s level were analyzed for all the GaN surfaces, aiming to determine the polarities of the GaN surfaces with polar and semipolar crystal orientations. (en)
Title
  • Surface analysis of free-standing GaN substrates with polar, nonpolar,and semipolar crystal orientations
  • Surface analysis of free-standing GaN substrates with polar, nonpolar,and semipolar crystal orientations (en)
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  • Surface analysis of free-standing GaN substrates with polar, nonpolar,and semipolar crystal orientations
  • Surface analysis of free-standing GaN substrates with polar, nonpolar,and semipolar crystal orientations (en)
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  • RIV/68378271:_____/13:00425133!RIV14-AV0-68378271
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  • 109064
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  • RIV/68378271:_____/13:00425133
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  • surface structure; non-polar GaN; semipolar GaN; LEED; photoelectron diffraction; crystal polarity (en)
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  • [542E8D29A609]
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  • San Francisco
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  • Bellingham
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  • Gallium Nitride Materials and Devices VIII
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  • Jiříček, Petr
  • Romanyuk, Olexandr
  • Paskova, T.
  • Bartoš, Igor
  • Mutombo, Pingo
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  • 000329526900052
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issn
  • 0277-786X
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  • 10.1117/12.2006400
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  • SPIE
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  • 978-0-8194-9394-1
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