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  • Optical data obtained for a-Si:H films by ellipsometry and spectrophotometry in the wide photon energy range 0.046–8.9 eV are fitted using the analytical dispersion models based on the application of the sum rule. The models include all absorption processes ranging from phonon absorption in IR region to core electron excitations in X-ray region. They take into account the existence of extended and localized states of valence electrons and distinguish transitions to conduction band and higher energy electron states.
  • Optical data obtained for a-Si:H films by ellipsometry and spectrophotometry in the wide photon energy range 0.046–8.9 eV are fitted using the analytical dispersion models based on the application of the sum rule. The models include all absorption processes ranging from phonon absorption in IR region to core electron excitations in X-ray region. They take into account the existence of extended and localized states of valence electrons and distinguish transitions to conduction band and higher energy electron states. (en)
Title
  • Application of sum rule to the dispersion model of hydrogenated amorphous silicon
  • Application of sum rule to the dispersion model of hydrogenated amorphous silicon (en)
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  • Application of sum rule to the dispersion model of hydrogenated amorphous silicon
  • Application of sum rule to the dispersion model of hydrogenated amorphous silicon (en)
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  • RIV/68378271:_____/13:00424878!RIV14-AV0-68378271
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  • 61817
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  • RIV/68378271:_____/13:00424878
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  • optical constants; ellipsometry; spectrophotometry; a-Si:H; Urbach tail; localized states; sum rule (en)
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  • CH - Švýcarská konfederace
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  • [3EF297743517]
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  • Thin Solid Films
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  • 539
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  • Franta, D.
  • Nečas, D.
  • Zajíčková, L.
  • Stuchlík, Jiří
  • Ohlídal, I.
  • Chvostová, Dagmar
http://linked.open...ain/vavai/riv/wos
  • 000321111100039
issn
  • 0040-6090
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.tsf.2013.04.012
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