About: Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Luminescence properties of MOVPE grown LEDs with active InAs/GaAs QD layer covered by GaAsSb SRL were investigated at temperatures from 10 to 400 K. Results show that the use of GaAsSb SRL with up to 14% Sb strongly increases luminescence, redshifts the emission maximum up to 1.4 μm while keeping the type I transition, narrows the luminescence linewidth and keeps the separation energy between the ground and excited state as in InAs/GaAs QD LEDs without SRL. The ground state electroluminescence shows the typical Stranski-Krastanov dot temperature properties. The electroluminescence intensity of the ground and excited state transitions increases with temperature (up to 80 K) due to the thermal escape of electrons from the wetting layer which reduces radiative recombination via wetting layer states. The dominant mechanism responsible for the thermal quenching of electroluminescence at elevated temperatures is the escape of electrons from QDs to the GaAs barrier. Luminescence properties of MOVPE grown LEDs with active InAs/GaAs QD layer covered by GaAsSb SRL were investigated at temperatures from 10 to 400 K. Results show that the use of GaAsSb SRL with up to 14% Sb strongly increases luminescence, redshifts the emission maximum up to 1.4 μm while keeping the type I transition, narrows the luminescence linewidth and keeps the separation energy between the ground and excited state as in InAs/GaAs QD LEDs without SRL. The ground state electroluminescence shows the typical Stranski-Krastanov dot temperature properties. The electroluminescence intensity of the ground and excited state transitions increases with temperature (up to 80 K) due to the thermal escape of electrons from the wetting layer which reduces radiative recombination via wetting layer states. The dominant mechanism responsible for the thermal quenching of electroluminescence at elevated temperatures is the escape of electrons from QDs to the GaAs barrier. (en)
Title	Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs (en)
skos:prefLabel	Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs (en)
skos:notation	RIV/68378271:_____/13:00396370!RIV14-GA0-68378271
http://linked.open...avai/predkladatel	Fyzikální ústav AV ČR, v.v.i.
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/09/0676), P(GAP102/10/1201), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	Sept
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Pangrác, Jiří Hulicius, Eduard Oswald, Jiří Hospodková, Alice
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	84931
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/13:00396370
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	quantum dots; electroluminescence; metalorganic vapor phase epitaxy; InAs; GaAsSb; light emitting diodes (en)
http://linked.open.../riv/klicoveSlovo	GaAsSb InAs electroluminescence light emitting diodes quantum dots metalorganic vapor phase epitaxy
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[CDFB7150EB49]
http://linked.open...i/riv/nazevZdroje	Thin Solid Films
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Impact of capping layers on electronic states in quantum dots Quantum dots for detectors and other devices
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	543
http://linked.open...iv/tvurceVysledku	Hulicius, Eduard Pangrác, Jiří Hazdra, P. Hospodková, Alice Oswald, Jiří
http://linked.open...ain/vavai/riv/wos	000324049500020
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	0040-6090
number of pages	5 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.tsf.2013.02.116

Faceted Search & Find service v1.16.116 as of Feb 22 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3239 as of Feb 22 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 67 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software