About: Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We report on the fabrication of an amorphous Si (a-Si) thin layer by means of bombardment of a Si(100) surface using monoenergetic C-60 cluster ions with energies from 50 keV to 400 keV. The C-60 cluster implantation produces nanogranules on the surface of a-Si layer detected by atomic force microscopy. The structural disorder and thickness of the modified layer were identified using Raman spectrometry, ion channelling, spectroscopic ellipsometry (SE) and transmission electron microscopy (TEM). According to SE and TEM data the thickness of a-Si layer gradually increases with cluster ion energy reaching to about 30 nm in the 200 keV C-60-bombarded Si sample. There is also thin layer of nanocrystalline Si found between the a-Si layer and pristine Si crystal. The obtained results represent an attractive method for creation of the a-Si layer as a functional material for opto- and nano-electronics. The study describes nanostructure created by cluster ion implantation as well as demonstrates the structural consequences of fast cluster energy dissipation in solids such as local heating and shock waves. We report on the fabrication of an amorphous Si (a-Si) thin layer by means of bombardment of a Si(100) surface using monoenergetic C-60 cluster ions with energies from 50 keV to 400 keV. The C-60 cluster implantation produces nanogranules on the surface of a-Si layer detected by atomic force microscopy. The structural disorder and thickness of the modified layer were identified using Raman spectrometry, ion channelling, spectroscopic ellipsometry (SE) and transmission electron microscopy (TEM). According to SE and TEM data the thickness of a-Si layer gradually increases with cluster ion energy reaching to about 30 nm in the 200 keV C-60-bombarded Si sample. There is also thin layer of nanocrystalline Si found between the a-Si layer and pristine Si crystal. The obtained results represent an attractive method for creation of the a-Si layer as a functional material for opto- and nano-electronics. The study describes nanostructure created by cluster ion implantation as well as demonstrates the structural consequences of fast cluster energy dissipation in solids such as local heating and shock waves. (en)
Title	Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment (en)
skos:prefLabel	Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment (en)
skos:notation	RIV/68378271:_____/13:00395956!RIV14-GA0-68378271
http://linked.open...avai/predkladatel	Fyzikální ústav AV ČR, v.v.i.
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GBP108/12/G108)
http://linked.open...iv/cisloPeriodika	SI
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Vorlíček, Vladimír Jäger, Aleš Jastrabík, Lubomír Chvostová, Dagmar Dejneka, Alexandr
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	66994
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/13:00395956
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	energetic clusters; silicon; surface modification; amorphization; nanostructure; Raman scattering; ion channeling (en)
http://linked.open.../riv/klicoveSlovo	energetic clusters ion channeling Raman scattering silicon amorphization surface modification nanostructure
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[DA7F5AEBD5FC]
http://linked.open...i/riv/nazevZdroje	Vacuum
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	9 (xsd:int)
http://linked.open...vavai/riv/projekt	Preparation, modification and characterization of materials by radiation
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	98
http://linked.open...iv/tvurceVysledku	Dejneka, Alexandr Jastrabík, Lubomír Jäger, Aleš Lavrentiev, Vasyl Vacík, Jiří Vorlíček, Vladimír Narumi, K. Chvostová, Dagmar Naramoto, H.
http://linked.open...ain/vavai/riv/wos	000322805900011
issn	0042-207X
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.vacuum.2013.05.017

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