About: Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Ce1%, 2% and 3% doped Gd3(Ga,Al)5O12 (GAGG) single crystals were grown by the Cz method. Luminescence and scintillation properties were measured. Light yield change along the growth direction and effects of Ce concentration on scintillation properties in Ce:GAGG were studied. 5d-4f emission within 520–530 nm was observed in the Ce:GAGG crystals. The Ce1%:GAGG sample with size 3x3x1mm showed the highest light yield of 46000 photon/MeV. The energy resolution was 7.8%@662 keV. With increasing solidification fraction, the LY were decreased. It is proposed that the increase of Ga concentration along the growth direction is the main cause of the decrease of LY. The scintillation decay times were accelerated with increasing Ce concentration in the Ce:GAGG crystals. The scintillation decay times were 92.0 ns, 79.1 ns and 68.3 ns in the Ce1, 2 and 3% GAGG, respectively. Ce1%, 2% and 3% doped Gd3(Ga,Al)5O12 (GAGG) single crystals were grown by the Cz method. Luminescence and scintillation properties were measured. Light yield change along the growth direction and effects of Ce concentration on scintillation properties in Ce:GAGG were studied. 5d-4f emission within 520–530 nm was observed in the Ce:GAGG crystals. The Ce1%:GAGG sample with size 3x3x1mm showed the highest light yield of 46000 photon/MeV. The energy resolution was 7.8%@662 keV. With increasing solidification fraction, the LY were decreased. It is proposed that the increase of Ga concentration along the growth direction is the main cause of the decrease of LY. The scintillation decay times were accelerated with increasing Ce concentration in the Ce:GAGG crystals. The scintillation decay times were 92.0 ns, 79.1 ns and 68.3 ns in the Ce1, 2 and 3% GAGG, respectively. (en)
Title	Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals (en)
skos:prefLabel	Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals (en)
skos:notation	RIV/68378271:_____/12:00389312!RIV13-GA0-68378271
http://linked.open...avai/predkladatel	Fyzikální ústav AV ČR, v.v.i.
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/08/0893), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	5
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Nikl, Martin Pejchal, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	129118
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/12:00389312
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	crystals; luminescence; solid scintillation detectors (en)
http://linked.open.../riv/klicoveSlovo	luminescence crystals solid scintillation detectors
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[637F81F9344D]
http://linked.open...i/riv/nazevZdroje	IEEE Transactions on Nuclear Science
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	9 (xsd:int)
http://linked.open...vavai/riv/projekt	Novel materials and technologies for thick film scintillators
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	59
http://linked.open...iv/tvurceVysledku	Endo, T. Fujimoto, Y. Fukabori, A. Kamada, K. Nikl, Martin Pejchal, Jan Tsutumi, K. Yanagida, T. Yoshikawa, A.
http://linked.open...ain/vavai/riv/wos	000310143300015
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	0018-9499
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1109/TNS.2012.2197024
is http://linked.open...avai/riv/vysledek of	Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals

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