About: Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Both crystallographically oriented and current line oriented pore networks in InP and GaAs are created by electrochemical dissolution. Heat treatment of InP pores at 650 degrees C and of GaAs pores at 700-850 degrees C converts them into microcavities maintaining almost the same crystallographic direction. As a transition between micro/nanopores and micro cavities the lamellar structures are obtained. Mass transport is responsible for the pore conversion. The effect of 'anion' vapour pressure is proved to be crucial for the microcavity formation since it influences the mass transport during the heat treatment. Electron microscopy and photoluminescence experiments reveal the absence of significant extended defects, both after the formation of pores and cavities. The capability of improved structural quality of homo-and hetero-epitaxially overgrown films on porous InP is demonstrated by liquid phase epitaxy growth of InP and InAs. Overgrowth of the porous GaAs substrates by ternary GaInAs layers with different lattice mismatch was realised by metal organic vapour phase epitaxy Both crystallographically oriented and current line oriented pore networks in InP and GaAs are created by electrochemical dissolution. Heat treatment of InP pores at 650 degrees C and of GaAs pores at 700-850 degrees C converts them into microcavities maintaining almost the same crystallographic direction. As a transition between micro/nanopores and micro cavities the lamellar structures are obtained. Mass transport is responsible for the pore conversion. The effect of 'anion' vapour pressure is proved to be crucial for the microcavity formation since it influences the mass transport during the heat treatment. Electron microscopy and photoluminescence experiments reveal the absence of significant extended defects, both after the formation of pores and cavities. The capability of improved structural quality of homo-and hetero-epitaxially overgrown films on porous InP is demonstrated by liquid phase epitaxy growth of InP and InAs. Overgrowth of the porous GaAs substrates by ternary GaInAs layers with different lattice mismatch was realised by metal organic vapour phase epitaxy (en)
Title	Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs (en)
skos:prefLabel	Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs (en)
skos:notation	RIV/68378271:_____/12:00387856!RIV13-GA0-68378271
http://linked.open...avai/predkladatel	Fyzikální ústav AV ČR, v.v.i.
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GAP108/10/0253)
http://linked.open...iv/cisloPeriodika	8-9
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Pangrác, Jiří Hulicius, Eduard
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	174254
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/12:00387856
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	growth; nanoporus (en)
http://linked.open.../riv/klicoveSlovo	nanoporus growth
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[AF728FF0831E]
http://linked.open...i/riv/nazevZdroje	International Journal of Nanotechnology
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	9
http://linked.open...iv/tvurceVysledku	Gladkov, Petr Grym, Jan Hulicius, Eduard Nohavica, Dušan Pangrác, Jiří Jarchovský, Zdeněk
http://linked.open...ain/vavai/riv/wos	000303800500006
issn	1475-7435
number of pages	14 (xsd:int)
http://bibframe.org/vocab/doi	10.1504/IJNT.2012.046751
is http://linked.open...avai/riv/vysledek of	Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs

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