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  • The rapid thermal direct deposition of micro-crystalline silicon (μc-Si) layers by atmospheric pressure chemical vapour deposition (APCVD) can be done on different intermediate layers. The deposition is done at temperatures between 850 °C and 1150 °C. A deposition rate of 1.6 μm/min has been achieved using standard process conditions. The microcrystalline structure changes depending on the deposition temperature and the layer thickness. Electron backscatter diffraction measurements show grain sizes of 0.5-10.0 μm with a columnar structure. Based on these process parameters and material properties the μc-Si layers have been simulated and optimised for two different solar cell concepts featuring different metallisation schemes and a comparison between epitaxial μc-Si emitter, diffused POCl3 emitter, and plasma enhanced chemical vapour deposition (PECVD) deposited a-Si heterojunction solar cells.
  • The rapid thermal direct deposition of micro-crystalline silicon (μc-Si) layers by atmospheric pressure chemical vapour deposition (APCVD) can be done on different intermediate layers. The deposition is done at temperatures between 850 °C and 1150 °C. A deposition rate of 1.6 μm/min has been achieved using standard process conditions. The microcrystalline structure changes depending on the deposition temperature and the layer thickness. Electron backscatter diffraction measurements show grain sizes of 0.5-10.0 μm with a columnar structure. Based on these process parameters and material properties the μc-Si layers have been simulated and optimised for two different solar cell concepts featuring different metallisation schemes and a comparison between epitaxial μc-Si emitter, diffused POCl3 emitter, and plasma enhanced chemical vapour deposition (PECVD) deposited a-Si heterojunction solar cells. (en)
Title
  • µc-Si solar cells by direct deposition with APCVD
  • µc-Si solar cells by direct deposition with APCVD (en)
skos:prefLabel
  • µc-Si solar cells by direct deposition with APCVD
  • µc-Si solar cells by direct deposition with APCVD (en)
skos:notation
  • RIV/68378271:_____/12:00386627!RIV13-AV0-68378271
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  • P(7E10061), P(LM2011026), Z(AV0Z10100521)
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  • 129140
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  • RIV/68378271:_____/12:00386627
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  • epitaxy; thin film solar cell; a-Si/µ-Si; microcrystalline silicon; Si film (en)
http://linked.open.../riv/klicoveSlovo
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  • [4EEF8489576E]
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  • Frankfurt
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  • München
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  • Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition
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  • Ledinský, Martin
  • Fejfar, Antonín
  • Janz, S.
  • Rachow, T.
  • Reber, S.
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
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number of pages
http://bibframe.org/vocab/doi
  • 10.4229/27thEUPVSEC2012-3CV.2.7
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  • WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG
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  • 3-936338-28-0
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