About: Scintillation properties of Ce doped Gd2Lu1(Ga,Al)5O12 single crystal grown by the micro-pulling-down method     Goto   Sponge   NotDistinct   Permalink

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  • Ce: Gd2Lu1(Ga,Al)5O12 single crystals were grown by the micro-pulling down (m-PD) method. All grown crystals were yellow and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ and at the Lu3+ sites by Gd3+ in garnet structure has been studied. In these crystals, Ce3+ 4f-5d emission is observed with 500-530nm wavelength. The decay accelerates with increasing Ga and Ce concentration. Ce1%: Gd2Lu1Ga3Al2O12 shows highest emission intensity. The light yield of Ce: Gd2Lu1Ga3Al2O12 sample with 3mmφx1mm size was around 24,000photon/MeV using calibration from 55Fe direct irradiation peak to APD. Scintillation decay time was around 50ns.
  • Ce: Gd2Lu1(Ga,Al)5O12 single crystals were grown by the micro-pulling down (m-PD) method. All grown crystals were yellow and transparent with 3.0 mm in diameter, 15-30 mm in length. Neither visible inclusions nor cracks were observed. Luminescence and scintillation properties were measured. The substitution at the Al3+ sites by Ga3+ and at the Lu3+ sites by Gd3+ in garnet structure has been studied. In these crystals, Ce3+ 4f-5d emission is observed with 500-530nm wavelength. The decay accelerates with increasing Ga and Ce concentration. Ce1%: Gd2Lu1Ga3Al2O12 shows highest emission intensity. The light yield of Ce: Gd2Lu1Ga3Al2O12 sample with 3mmφx1mm size was around 24,000photon/MeV using calibration from 55Fe direct irradiation peak to APD. Scintillation decay time was around 50ns. (en)
Title
  • Scintillation properties of Ce doped Gd2Lu1(Ga,Al)5O12 single crystal grown by the micro-pulling-down method
  • Scintillation properties of Ce doped Gd2Lu1(Ga,Al)5O12 single crystal grown by the micro-pulling-down method (en)
skos:prefLabel
  • Scintillation properties of Ce doped Gd2Lu1(Ga,Al)5O12 single crystal grown by the micro-pulling-down method
  • Scintillation properties of Ce doped Gd2Lu1(Ga,Al)5O12 single crystal grown by the micro-pulling-down method (en)
skos:notation
  • RIV/68378271:_____/12:00379857!RIV13-AV0-68378271
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  • Z(AV0Z10100521)
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  • 1
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  • 166876
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  • RIV/68378271:_____/12:00379857
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  • single crystal growth; oxides; scintillator materials (en)
http://linked.open.../riv/klicoveSlovo
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  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [7D8C5321C147]
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  • Journal of Crystal Growth
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  • 352
http://linked.open...iv/tvurceVysledku
  • Endo, T.
  • Fujimoto, Y.
  • Fukabori, A.
  • Kamada, K.
  • Nikl, Martin
  • Pejchal, Jan
  • Tsutumi, K.
  • Yanagida, T.
  • Yoshikawa, A.
  • Usuki, Y.
http://linked.open...ain/vavai/riv/wos
  • 000306089300009
http://linked.open...n/vavai/riv/zamer
issn
  • 0022-0248
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.jcrysgro.2011.11.057
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