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Description
  • Characterization of electronic properties of protein diamond interface by using microscopic (20 μm) solution-gated field-effect transistors (SGFET) based on H-terminated nanocrystalline diamond films (NCD) on glass. We show that NCD films with grain sizes down to 80 nm and thickness down to 100 nm are operational as SGFETs.
  • Characterization of electronic properties of protein diamond interface by using microscopic (20 μm) solution-gated field-effect transistors (SGFET) based on H-terminated nanocrystalline diamond films (NCD) on glass. We show that NCD films with grain sizes down to 80 nm and thickness down to 100 nm are operational as SGFETs. (en)
Title
  • Characteristics of nanocrystalline diamond SGFETs under cell culture conditions
  • Characteristics of nanocrystalline diamond SGFETs under cell culture conditions (en)
skos:prefLabel
  • Characteristics of nanocrystalline diamond SGFETs under cell culture conditions
  • Characteristics of nanocrystalline diamond SGFETs under cell culture conditions (en)
skos:notation
  • RIV/68378271:_____/11:00375023!RIV12-AV0-68378271
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  • P(GAP204/10/0212), P(GD202/09/H041), P(IAAX00100902), P(KAN400100701), P(LC06040), P(LC510), Z(AV0Z10100521)
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  • 189941
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  • RIV/68378271:_____/11:00375023
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  • SGFET; proteins; cells; nanocrystalline diamond (en)
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http://linked.open...ontrolniKodProRIV
  • [BA1EFF0C2007]
http://linked.open...v/mistoKonaniAkce
  • Prague
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  • Praha
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  • WDS'11 Proceedings of Contributed Papers: Part III: Physics
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  • Brož, A.
  • Kalbáčová, M.
  • Kromka, Alexander
  • Krátká, Marie
  • Rezek, Bohuslav
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number of pages
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  • MATFYZPRESS
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  • 978-80-7378-186-6
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