About: Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

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Description	We present a comparison of photo- (PL) and electro-luminescence (EL) spectra of quantum dot (QD) structures with different strain reducing layers (SRL). Simple QD structures without SRL have negligible difference between the PL and EL maxima, which are near 1250 nm. InGaAs and GaAsSb SRLs were used to shift the luminescence maximum towards telecommunication wavelengths at 1.3 or 1.55 μm. We have found that MOVPE prepared QD structures with SRL exhibit an EL maximum at a considerably shorter wavelength than the PL maximum measured on similar samples without doping in the absence of built-in electric field. A mechanism to explain this phenomenon is proposed for both types of SRLs. The GaAsSb SRL is more suitable for long wavelength EL due to the higher confinement potential of electrons compared to InGaAs SRL. EL maximum at 1300 nm and PL maximum at 1520 nm were achieved on InAs QD structures with GaAs0.87Sb0.13 SRL (type I heterojunction). We present a comparison of photo- (PL) and electro-luminescence (EL) spectra of quantum dot (QD) structures with different strain reducing layers (SRL). Simple QD structures without SRL have negligible difference between the PL and EL maxima, which are near 1250 nm. InGaAs and GaAsSb SRLs were used to shift the luminescence maximum towards telecommunication wavelengths at 1.3 or 1.55 μm. We have found that MOVPE prepared QD structures with SRL exhibit an EL maximum at a considerably shorter wavelength than the PL maximum measured on similar samples without doping in the absence of built-in electric field. A mechanism to explain this phenomenon is proposed for both types of SRLs. The GaAsSb SRL is more suitable for long wavelength EL due to the higher confinement potential of electrons compared to InGaAs SRL. EL maximum at 1300 nm and PL maximum at 1520 nm were achieved on InAs QD structures with GaAs0.87Sb0.13 SRL (type I heterojunction). (en)
Title	Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures (en)
skos:prefLabel	Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures (en)
skos:notation	RIV/68378271:_____/11:00371379!RIV12-AV0-68378271
http://linked.open...avai/predkladatel	Fyzikální ústav AV ČR, v.v.i.
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/09/0676), P(GAP102/10/1201), P(LC510), Z(AV0Z10100521), Z(MSM6840770014)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Pangrác, Jiří Hulicius, Eduard Kuldová, Karla Oswald, Jiří Vyskočil, Jan Hospodková, Alice
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	204581
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/11:00371379
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	low dimensional structures; photoluminescence; electroluminescence; low-pressure MOVPE; InAs/GaAs quantum dots; semiconducting III–V materials (en)
http://linked.open.../riv/klicoveSlovo	InAs/GaAs quantum dots electroluminescence low dimensional structures low-pressure MOVPE semiconducting III–V materials photoluminescence
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[67A52E32395B]
http://linked.open...i/riv/nazevZdroje	Journal of Crystal Growth
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...vavai/riv/projekt	Center of nanotechnology and materials for nanoelectronics Impact of capping layers on electronic states in quantum dots Quantum dots for detectors and other devices
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	315
http://linked.open...iv/tvurceVysledku	Hulicius, Eduard Pangrác, Jiří Hazdra, P. Hospodková, Alice Kuldová, Karla Oswald, Jiří Vyskočil, Jan
http://linked.open...ain/vavai/riv/wos	000287558400024
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films Výzkum perspektivních informačních a komunikačních technologií
issn	0022-0248
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.jcrysgro.2010.09.041
is http://linked.open...avai/riv/vysledek of	Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

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