About: Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction     Goto   Sponge   NotDistinct   Permalink

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  • The symmetry and existence ranges of GaSb and AlSb (111) A and B surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE)environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of III-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120 domain structure and possible disorder.
  • The symmetry and existence ranges of GaSb and AlSb (111) A and B surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE)environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of III-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120 domain structure and possible disorder. (en)
Title
  • Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction
  • Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction (en)
skos:prefLabel
  • Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction
  • Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction (en)
skos:notation
  • RIV/68378271:_____/11:00364023!RIV12-AV0-68378271
http://linked.open...avai/predkladatel
http://linked.open...avai/riv/aktivita
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  • P(GPP204/10/P028), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika
  • 15
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
  • Romanyuk, Olexandr
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  • 185661
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  • RIV/68378271:_____/11:00364023
http://linked.open...riv/jazykVysledku
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  • III-V semiconductor surfaces; RHEED; surface reconstruction; MBE (en)
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http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [A1E5A0FA350A]
http://linked.open...i/riv/nazevZdroje
  • Physical Review. B
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  • 83
http://linked.open...iv/tvurceVysledku
  • Braun, W.
  • Grosse, F.
  • Katmis, F.
  • Proessdorf, A.
  • Riechert, H.
  • Romanyuk, Olexandr
http://linked.open...ain/vavai/riv/wos
  • 000292149600006
http://linked.open...n/vavai/riv/zamer
issn
  • 1098-0121
number of pages
http://bibframe.org/vocab/doi
  • 10.1103/PhysRevB.83.155317
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