About: Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment

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About: Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We are developing n+-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip 1 kΩ, after the integrated luminosity of 6 ab1, which is twice the luminosity goal. We are developing n+-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip 1 kΩ, after the integrated luminosity of 6 ab1, which is twice the luminosity goal. (en)
Title	Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment (en)
skos:prefLabel	Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment (en)
skos:notation	RIV/68378271:_____/11:00361427!RIV13-AV0-68378271
http://linked.open...avai/predkladatel	Fyzikální ústav AV ČR, v.v.i.
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(LA08032), Z(AV0Z10100502), Z(MSM0021620859)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Böhm, Jan Mikeštíková, Marcela
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	234924
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/11:00361427
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	p-bulk silicon; surface damage; charge collection; punch-through voltage (en)
http://linked.open.../riv/klicoveSlovo	charge collection p-bulk silicon punch-through voltage surface damage
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[AD4BFB5F5EE2]
http://linked.open...i/riv/nazevZdroje	Nuclear Instruments & Methods in Physics Research Section A
http://linked.open...in/vavai/riv/obor	BF
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	73 (xsd:int)
http://linked.open...vavai/riv/projekt	International experiment ATLAS-CERN
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	636
http://linked.open...iv/tvurceVysledku	Böhm, Jan Bates, R. Mikeštíková, Marcela Affolder, A. A. Allport, P. P. Betancourt, C. Brown, H. Buttar, C. Carter, J. R. Casse, G. Lindgren, S.
http://linked.open...ain/vavai/riv/wos	000291416400019
http://linked.open...n/vavai/riv/zamer	Jevy fyziky elementárních částic přesahující standardní model Výzkum vlastností jader a subjaderných částic a jejich interakcí
issn	0168-9002
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.nima.2010.04.094
is http://linked.open...avai/riv/vysledek of	Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment

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