About: InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	InAs/GaAs quantum dot(QD)properties can be significantly influenced by the growth conditions of the QD capping layer. We have studied the effect of a group III partial pressure in the reactor on the QD capping process and on the QD photoluminescence when the capping layer is grow nunder the kinetically limited regime. Two types of capping layers were prepared: GaAs and InGaAs. The GaAs capping layer growth rate decrease did not influence QD dissolution, but increased the dissolution of big hillocks. Influence of the GaAs capping layer thickness on QD photoluminescence is also demonstrated. The composition of the ternary strain reducing InGaAs capping layer can beconsiderably changed depending on the V/III ratio under kinetically limited growth. InAs/GaAs quantum dot(QD)properties can be significantly influenced by the growth conditions of the QD capping layer. We have studied the effect of a group III partial pressure in the reactor on the QD capping process and on the QD photoluminescence when the capping layer is grow nunder the kinetically limited regime. Two types of capping layers were prepared: GaAs and InGaAs. The GaAs capping layer growth rate decrease did not influence QD dissolution, but increased the dissolution of big hillocks. Influence of the GaAs capping layer thickness on QD photoluminescence is also demonstrated. The composition of the ternary strain reducing InGaAs capping layer can beconsiderably changed depending on the V/III ratio under kinetically limited growth. (en)
Title	InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime (en)
skos:prefLabel	InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime (en)
skos:notation	RIV/68378271:_____/11:00359526!RIV12-AV0-68378271
http://linked.open...avai/predkladatel	Fyzikální ústav AV ČR, v.v.i.
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/09/0676), P(GAP102/10/1201), P(GAP108/10/0253), P(LC510), Z(AV0Z10100521), Z(MSM6840770014)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Pangrác, Jiří Hulicius, Eduard Kuldová, Karla Oswald, Jiří Vyskočil, Jan Hospodková, Alice Vetushka, Aliaksi
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	204063
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/11:00359526
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	low dimensional structures; photoluminescence; low-pressure MOVPE; InAs/GaAs quantum dots; semiconducting III–V materials (en)
http://linked.open.../riv/klicoveSlovo	InAs/GaAs quantum dots low dimensional structures low-pressure MOVPE semiconducting III–V materials photoluminescence
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[168408A1C3DF]
http://linked.open...i/riv/nazevZdroje	Journal of Crystal Growth
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	7 (xsd:int)
http://linked.open...cetTvurcuVysledku	9 (xsd:int)
http://linked.open...vavai/riv/projekt	Center of nanotechnology and materials for nanoelectronics Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores Impact of capping layers on electronic states in quantum dots Quantum dots for detectors and other devices
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	317
http://linked.open...iv/tvurceVysledku	Hulicius, Eduard Pangrác, Jiří Hazdra, P. Hospodková, Alice Kuldová, Karla Oswald, Jiří Vyskočil, Jan Caha, O. Vetushka, Aliaksi
http://linked.open...ain/vavai/riv/wos	000288837700008
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films Výzkum perspektivních informačních a komunikačních technologií
issn	0022-0248
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.jcrysgro.2010.12.076
is http://linked.open...avai/riv/vysledek of	InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime

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