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  • We report on low-temperature, micro-photoluminescence study of quantum confinement in MOVPE-grown structures with InAs/GaAs quantum dots (QDs) with GaAs and/or strain reducing InGaAs/GaAs capping. We focus our attention on sharp emission lines, which appear in both structures at energies up to 80 meV below the wetting line emission. Power-dependent measurements confirmed their attribution to single excitons as well as biexcitons. Negative binding energy of biexcitons with systematic dependence on their energy was observed. It has been proposed that the investigated emission lines result from radiative recombination in flat non-fully developed QDs in the investigated structure. The attribution is confirmed by transmission electron microscopic analysis of investigated structures.
  • We report on low-temperature, micro-photoluminescence study of quantum confinement in MOVPE-grown structures with InAs/GaAs quantum dots (QDs) with GaAs and/or strain reducing InGaAs/GaAs capping. We focus our attention on sharp emission lines, which appear in both structures at energies up to 80 meV below the wetting line emission. Power-dependent measurements confirmed their attribution to single excitons as well as biexcitons. Negative binding energy of biexcitons with systematic dependence on their energy was observed. It has been proposed that the investigated emission lines result from radiative recombination in flat non-fully developed QDs in the investigated structure. The attribution is confirmed by transmission electron microscopic analysis of investigated structures. (en)
Title
  • Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots
  • Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots (en)
skos:prefLabel
  • Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots
  • Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots (en)
skos:notation
  • RIV/68378271:_____/10:00383781!RIV13-GA0-68378271
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA202/09/0676), P(GAP102/10/1201), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika
  • 1
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  • 283645
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/10:00383781
http://linked.open...riv/jazykVysledku
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  • photoluminescence; InAs/GaAs; quantum dots (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV
  • [25DBD7945DA4]
http://linked.open...i/riv/nazevZdroje
  • Journal of Physics: Conference Series
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http://linked.open...v/svazekPeriodika
  • 245
http://linked.open...iv/tvurceVysledku
  • Pangrác, Jiří
  • Výborný, Zdeněk
  • Kuldová, Karla
  • Oswald, Jiří
  • Babinski, A.
  • Borysiuk, J.
  • Molas, M.
http://linked.open...ain/vavai/riv/wos
  • 000294907400079
http://linked.open...n/vavai/riv/zamer
issn
  • 1742-6588
number of pages
http://bibframe.org/vocab/doi
  • 10.1088/1742-6596/245/1/012079
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