About: Local enhancement of inelastic tunnelling in epitaxial graphene on SiC(0001)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We have measured the elastic and inelastic tunnelling properties of epitaxial graphene on SiC(0001) using cryogenic scanning tunnelling spectroscopy. We find that the dominant inelastic channel of the out-of-plane acoustic graphene phonon at 70mV is spatially localized to particular regions of the graphene–SiC system that contain localized states. At these locations the maximum inelastic tunnelling channel reaches up to half of the total tunnelling current. The local enhancement of the inelastic tunnelling is found at the localized electron states of the graphene/SiC interface layer. Nonequilibrium Green’s function formalism theory calculations indicate that this intense inelastic channel arises from graphene phonon modes strongly coupled to narrow electron states. We have measured the elastic and inelastic tunnelling properties of epitaxial graphene on SiC(0001) using cryogenic scanning tunnelling spectroscopy. We find that the dominant inelastic channel of the out-of-plane acoustic graphene phonon at 70mV is spatially localized to particular regions of the graphene–SiC system that contain localized states. At these locations the maximum inelastic tunnelling channel reaches up to half of the total tunnelling current. The local enhancement of the inelastic tunnelling is found at the localized electron states of the graphene/SiC interface layer. Nonequilibrium Green’s function formalism theory calculations indicate that this intense inelastic channel arises from graphene phonon modes strongly coupled to narrow electron states. (en)
Title	Local enhancement of inelastic tunnelling in epitaxial graphene on SiC(0001) Local enhancement of inelastic tunnelling in epitaxial graphene on SiC(0001) (en)
skos:prefLabel	Local enhancement of inelastic tunnelling in epitaxial graphene on SiC(0001) Local enhancement of inelastic tunnelling in epitaxial graphene on SiC(0001) (en)
skos:notation	RIV/68378271:_____/10:00353074!RIV11-AV0-68378271
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	10-12
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Červenka, Jiří
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	268743
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/10:00353074
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	graphene; phonons; scanning tunnelling microscopy; silicon carbide (en)
http://linked.open.../riv/klicoveSlovo	silicon carbide phonons scanning tunnelling microscopy graphene
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[F2DDB0915ACE]
http://linked.open...i/riv/nazevZdroje	Physica Status Solidi B-Basic Solid State Physics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	247
http://linked.open...iv/tvurceVysledku	Flipse, C.F.J. Červenka, Jiří van de Ruit, K.
http://linked.open...ain/vavai/riv/wos	000285798400083
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	0370-1972
number of pages	5 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Local enhancement of inelastic tunnelling in epitaxial graphene on SiC(0001) Local enhancement of inelastic tunnelling in epitaxial graphene on SiC(0001) Local enhancement of inelastic tunnelling in epitaxial graphene on SiC(0001)

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