About: Effect of local doping on the electronic properties of epitaxial graphene on SiC

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we report an atomically resolved scanning tunneling microscopy and spectroscopy study of local structural and electronic properties of epitaxial graphene. Sharp localized states from the graphene/SiC(0001) interface have been found to strongly influence the electronic properties of the first graphene layer, causing local doping of graphene layer. The disordered high electron density states have originated from the underlying carbon-rich interface layer whose structure is discussed. Graphene grown on silicon carbide (SiC) is a promising material for high speed electronic devices. However, for possible future applications it is important to understand the electron properties of this material and how it is affected by the interaction with the SiC interface. Here we report an atomically resolved scanning tunneling microscopy and spectroscopy study of local structural and electronic properties of epitaxial graphene. Sharp localized states from the graphene/SiC(0001) interface have been found to strongly influence the electronic properties of the first graphene layer, causing local doping of graphene layer. The disordered high electron density states have originated from the underlying carbon-rich interface layer whose structure is discussed. (en)
Title	Effect of local doping on the electronic properties of epitaxial graphene on SiC Effect of local doping on the electronic properties of epitaxial graphene on SiC (en)
skos:prefLabel	Effect of local doping on the electronic properties of epitaxial graphene on SiC Effect of local doping on the electronic properties of epitaxial graphene on SiC (en)
skos:notation	RIV/68378271:_____/10:00343352!RIV11-AV0-68378271
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	3
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Červenka, Jiří
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	256041
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/10:00343352
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	graphene; silicon carbide; scanning tunneling microscopy; electronic structure (en)
http://linked.open.../riv/klicoveSlovo	electronic structure silicon carbide scanning tunneling microscopy graphene
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[D4EB76A4926B]
http://linked.open...i/riv/nazevZdroje	Physica Status Solidi. A
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	207
http://linked.open...iv/tvurceVysledku	Červenka, Jiří Flipse, K. van der Ruit, K.
http://linked.open...ain/vavai/riv/wos	000276339800021
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	1862-6300
number of pages	4 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Effect of local doping on the electronic properties of epitaxial graphene on SiC Effect of local doping on the electronic properties of epitaxial graphene on SiC Effect of local doping on the electronic properties of epitaxial graphene on SiC

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