About: Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The time resolved reflectance anisotropy spectroscopy (RAS) measurement at 4.2 eV was used for the optimization of technological parameters for Stranski-Krastanow quantum dot (QD) formation. RAS measurement helps us to study the MOVPE surface processes such as QD formation, dissolution of In from InAs QDs during the growth of GaAs capping layer or recovery of epitaxial surface from As deficiency, when As partial pressure is increased. We have shown, that the recovery of epitaxial surface from As deficiency is rather a slow process of the order of tens of seconds. For the first time was observed in situ the mechanism of In atoms migration from QDs during GaAs capping layer growth. First the GaAs layer is formed and then the In migration from QDs follows. These two processes do not start at the same time, the In dissolution is delayed. Conclusions extracted from RAS measurement are in agreement with photoluminescence results. The time resolved reflectance anisotropy spectroscopy (RAS) measurement at 4.2 eV was used for the optimization of technological parameters for Stranski-Krastanow quantum dot (QD) formation. RAS measurement helps us to study the MOVPE surface processes such as QD formation, dissolution of In from InAs QDs during the growth of GaAs capping layer or recovery of epitaxial surface from As deficiency, when As partial pressure is increased. We have shown, that the recovery of epitaxial surface from As deficiency is rather a slow process of the order of tens of seconds. For the first time was observed in situ the mechanism of In atoms migration from QDs during GaAs capping layer growth. First the GaAs layer is formed and then the In migration from QDs follows. These two processes do not start at the same time, the In dissolution is delayed. Conclusions extracted from RAS measurement are in agreement with photoluminescence results. (en)
Title	Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy (en)
skos:prefLabel	Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy (en)
skos:notation	RIV/68378271:_____/10:00342088!RIV11-GA0-68378271
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/09/0676), P(IAA100100719), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	3-4
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Pangrác, Jiří Hulicius, Eduard Kuldová, Karla Oswald, Jiří Vyskočil, Jan Hospodková, Alice
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	291151
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/10:00342088
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	low-pressure Metal–Organic Vapor Phase; InAs/GaAs quantum dots; reflectance anisotropy spectroscopy Surface reconstruction; surface reconstruction (en)
http://linked.open.../riv/klicoveSlovo	InAs/GaAs quantum dots surface reconstruction low-pressure Metal–Organic Vapor Phase reflectance anisotropy spectroscopy Surface reconstruction
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[BD21CE9E8209]
http://linked.open...i/riv/nazevZdroje	Surface Science
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Impact of capping layers on electronic states in quantum dots Controlled quantum dot MOVPE growth
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	604
http://linked.open...iv/tvurceVysledku	Hulicius, Eduard Pangrác, Jiří Hospodková, Alice Kuldová, Karla Oswald, Jiří Vyskočil, Jan
http://linked.open...ain/vavai/riv/wos	00027497900001
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	0039-6028
number of pages	4 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 58 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software