About: Wavelength dependence of the damage threshold of inorganic materials under extreme-ultraviolet free-electron-laser irradiation     Goto   Sponge   NotDistinct   Permalink

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  • We exposed bulk SiC and films of SiC and B4C to single 25 fs long free-electron-laser pulses with wavelengths between 13.5 and 32 nm. The materials are candidates for x-ray free-electron laser optics. We found that the threshold for surface-damage of the bulk SiC samples exceeds the fluence required for thermal melting at all wavelengths. The damage threshold of the film sample shows a strong wavelength dependence. For wavelengths of 13.5 and 21.7 nm, the damage threshold is equal to or exceeds the melting threshold, whereas at 32 nm the damage threshold falls below the melting threshold.
  • We exposed bulk SiC and films of SiC and B4C to single 25 fs long free-electron-laser pulses with wavelengths between 13.5 and 32 nm. The materials are candidates for x-ray free-electron laser optics. We found that the threshold for surface-damage of the bulk SiC samples exceeds the fluence required for thermal melting at all wavelengths. The damage threshold of the film sample shows a strong wavelength dependence. For wavelengths of 13.5 and 21.7 nm, the damage threshold is equal to or exceeds the melting threshold, whereas at 32 nm the damage threshold falls below the melting threshold. (en)
Title
  • Wavelength dependence of the damage threshold of inorganic materials under extreme-ultraviolet free-electron-laser irradiation
  • Wavelength dependence of the damage threshold of inorganic materials under extreme-ultraviolet free-electron-laser irradiation (en)
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  • Wavelength dependence of the damage threshold of inorganic materials under extreme-ultraviolet free-electron-laser irradiation
  • Wavelength dependence of the damage threshold of inorganic materials under extreme-ultraviolet free-electron-laser irradiation (en)
skos:notation
  • RIV/68378271:_____/09:00334092!RIV10-MSM-68378271
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(IAA400100701), P(KAN300100702), P(LA08024), P(LC510), P(LC528), Z(AV0Z10100523)
http://linked.open...iv/cisloPeriodika
  • 11
http://linked.open...vai/riv/dodaniDat
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http://linked.open...dnocenehoVysledku
  • 351744
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/09:00334092
http://linked.open...riv/jazykVysledku
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  • damage threshold; silicon carbide; boron carbide; soft X-ray free-electron laser (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [F4C62613479A]
http://linked.open...i/riv/nazevZdroje
  • Applied Physics Letters
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
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http://linked.open...v/svazekPeriodika
  • 95
http://linked.open...iv/tvurceVysledku
  • Chalupský, Jaromír
  • Hau-Riege, S. P.
  • Hájková, Věra
  • Juha, Libor
  • Krzywinski, J.
  • Krása, Josef
  • Cihelka, Jaroslav
  • Jurek, M.
  • Klinger, D.
  • Pelka, J. B.
  • Sobierajski, R.
  • Tiedtke, K.
  • Toleikis, S.
  • Wabnitz, H.
  • Velyhan, Andriy
  • Soufli, R.
  • Bajt, S.
  • Bergh, M.
  • Caleman, C.
  • Timneanu, N.
  • London, R. A.
  • Baker, S. L.
  • Nietubyc, R.
  • Bionta, R. M.
  • McKernan, M. A.
  • Ryutov, D.
http://linked.open...ain/vavai/riv/wos
  • 000270096900004
http://linked.open...n/vavai/riv/zamer
issn
  • 0003-6951
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