| Attributes | Values |
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| rdf:type
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| Description
| - Field-enhanced metal-induced solid phase crystallization (FE-MISPC) at room temperature is employed to create microscopic crystalline regions at predefined positions in hydrogen-rich amorphous silicon (a-Si:H) films. Electric field is applied locally using a sharp conductive tip in atomic force microscope (AFM) and nickel electrode below the a-Si:H film. The process is driven by a constant current of -50 pA to -500 pA while controlling the amount of transferred energy (1–300 nJ) as a function of time. Passing current leads to a formation of nanoscale pits in the a-Si:H films. Depending on the energy amount and rate the pits exhibit lower or orders of magnitude higher conductivity as detected by current-sensing AFM. High conductivity is attributed to a local crystallization of the films. This is confirmed by micro-Raman spectroscopy.
- Field-enhanced metal-induced solid phase crystallization (FE-MISPC) at room temperature is employed to create microscopic crystalline regions at predefined positions in hydrogen-rich amorphous silicon (a-Si:H) films. Electric field is applied locally using a sharp conductive tip in atomic force microscope (AFM) and nickel electrode below the a-Si:H film. The process is driven by a constant current of -50 pA to -500 pA while controlling the amount of transferred energy (1–300 nJ) as a function of time. Passing current leads to a formation of nanoscale pits in the a-Si:H films. Depending on the energy amount and rate the pits exhibit lower or orders of magnitude higher conductivity as detected by current-sensing AFM. High conductivity is attributed to a local crystallization of the films. This is confirmed by micro-Raman spectroscopy. (en)
- Polem-stimulavaná krystalizace v pevné fázi při pokojové teplotě je použita pro vytvoření krystalických oblastí v amorfním křemíku s vysokým obsahem vodíku v předem definovaných pozicích. Elektrické pole bylo vyvoláno mezi hrotem mikroskopu atomárních sil a niklovou elektrodou pod vrstvou amorfního křemíku. Proces je řízen konstantním proudem mezi 50 až 500 pA a systému je dodána předem definovaná energie mezi 1 až 300 nJ. Průchod proudu vede k vytvoření důlku s nanometrovými rozměry, v jehož středu se vytváří krystalická oblast, což bylo prokázáno mapou vodivosti v AFM i mikroRamanovskou spektroskopií. (cs)
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| Title
| - Spatially localized current-induced crystallization of amorphous silicon films
- Prostorově definovaná krystalizace vrstev amorfního křemíku indukovaná proudem (cs)
- Spatially localized current-induced crystallization of amorphous silicon films (en)
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| skos:prefLabel
| - Spatially localized current-induced crystallization of amorphous silicon films
- Prostorově definovaná krystalizace vrstev amorfního křemíku indukovaná proudem (cs)
- Spatially localized current-induced crystallization of amorphous silicon films (en)
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| skos:notation
| - RIV/68378271:_____/08:00320315!RIV09-AV0-68378271
|
| http://linked.open...avai/riv/aktivita
| |
| http://linked.open...avai/riv/aktivity
| - P(KAN400100701), P(LC06040), P(LC510), Z(AV0Z10100521)
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| http://linked.open...iv/cisloPeriodika
| |
| http://linked.open...vai/riv/dodaniDat
| |
| http://linked.open...aciTvurceVysledku
| |
| http://linked.open.../riv/druhVysledku
| |
| http://linked.open...iv/duvernostUdaju
| |
| http://linked.open...titaPredkladatele
| |
| http://linked.open...dnocenehoVysledku
| |
| http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/08:00320315
|
| http://linked.open...riv/jazykVysledku
| |
| http://linked.open.../riv/klicovaSlova
| - silicon; crystallization; atomic force and scanning tunneling microscopy; nanocrystals (en)
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| http://linked.open.../riv/klicoveSlovo
| |
| http://linked.open...odStatuVydavatele
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| http://linked.open...ontrolniKodProRIV
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| http://linked.open...i/riv/nazevZdroje
| - Journal of Non-Crystalline Solids
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| http://linked.open...in/vavai/riv/obor
| |
| http://linked.open...ichTvurcuVysledku
| |
| http://linked.open...cetTvurcuVysledku
| |
| http://linked.open...vavai/riv/projekt
| |
| http://linked.open...UplatneniVysledku
| |
| http://linked.open...v/svazekPeriodika
| |
| http://linked.open...iv/tvurceVysledku
| - Rezek, Bohuslav
- Ledinský, Martin
- Fejfar, Antonín
- Stuchlík, Jiří
- Kočka, Jan
- Šípek, Emil
- Krejza, P.
|
| http://linked.open...ain/vavai/riv/wos
| |
| http://linked.open...n/vavai/riv/zamer
| |
| issn
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| number of pages
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| is http://linked.open...avai/riv/vysledek
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