About: Substrate temperature changes during molecular beam epitaxy growth of GaMnAs

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Meření tepoty pomocí spektroskopie zakázaného pásu ukazuje, že pri rustu vrstev GaMnAs pomocí nízkoteplotní MBE dochází k pozoruhodne velkému nárustu teploty substrátu. S použitím numerických simulací tento efekt vysvetlujeme jako důsledek změn v absorpcní a emisní charakteristice rostoucí epitaxní vrstvy. Diskutujeme rovnež možnosti redukce teplotních změn (cs) increase of the substrate temperature during the low-temperature MBE growth of GaMnAs layers. With the help of numerical simulations we explain the effect as a consequence of changing absorption/emission characteristics of the growing epilayer. We discuss possibilities for reducing the substrate temperature variations during the growth increase of the substrate temperature during the low-temperature MBE growth of GaMnAs layers. With the help of numerical simulations we explain the effect as a consequence of changing absorption/emission characteristics of the growing epilayer. We discuss possibilities for reducing the substrate temperature variations during the growth (en)
Title	Substrate temperature changes during molecular beam epitaxy growth of GaMnAs Substrate temperature changes during molecular beam epitaxy growth of GaMnAs (en) Změny teploty substrátu během růstu GaMnAs technologií molekulární svazkové epitaxe (cs)
skos:prefLabel	Substrate temperature changes during molecular beam epitaxy growth of GaMnAs Substrate temperature changes during molecular beam epitaxy growth of GaMnAs (en) Změny teploty substrátu během růstu GaMnAs technologií molekulární svazkové epitaxe (cs)
skos:notation	RIV/68378271:_____/07:00093079!RIV08-AV0-68378271
http://linked.open.../vavai/riv/strany	083536/1;083536/4
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/04/1519), P(KAN400100652), P(LC510), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	8
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Novák, Vít Remeš, Zdeněk Cukr, Miroslav Smrčka, Ludvík Oswald, Jiří Olejník, Kamil
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	453438
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/07:00093079
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	GaMnAs; MBE; substrate temperature changes (en)
http://linked.open.../riv/klicoveSlovo	substrate temperature changes GaMnAs MBE
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[212DF6F4CAF0]
http://linked.open...i/riv/nazevZdroje	Journal of Applied Physics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Center of nanotechnology and materials for nanoelectronics Structures for spintronics and quantum phenomena created by electron beam lithography Low-temperature molecular beam epitaxy of ferromagnetic (Ga,Mn)As
http://linked.open...UplatneniVysledku	2007
http://linked.open...v/svazekPeriodika	102
http://linked.open...iv/tvurceVysledku	Novák, Vít Cukr, Miroslav Remeš, Zdeněk Smrčka, Ludvík Oswald, Jiří Olejník, Kamil
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	0021-8979
number of pages	4 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Substrate temperature changes during molecular beam epitaxy growth of GaMnAs Substrate temperature changes during molecular beam epitaxy growth of GaMnAs Substrate temperature changes during molecular beam epitaxy growth of GaMnAs

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