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  • The electronic properties of hydrogen-terminated single-crystalline chemical-vapor deposited diamond in electrolyte solutions between pH 2 and 12 have been characterized by cyclic voltammetry experiments and pH-sensitive measurements using ion-sensitive field-effect transistor structures. The data show the formation of surface conductivity in diamond which is pH dependent (66 mV/pH). H+-surface termination of diamond establishes an enlarged tunneling gap which prevents electronic interactions between the electrolyte and diamond
  • The electronic properties of hydrogen-terminated single-crystalline chemical-vapor deposited diamond in electrolyte solutions between pH 2 and 12 have been characterized by cyclic voltammetry experiments and pH-sensitive measurements using ion-sensitive field-effect transistor structures. The data show the formation of surface conductivity in diamond which is pH dependent (66 mV/pH). H+-surface termination of diamond establishes an enlarged tunneling gap which prevents electronic interactions between the electrolyte and diamond (en)
  • Elektronické vlastnosti vodíkem zakončeného monokrystalického z chemických par narostlého diamantu v elektrolytických roztocích mezi pH 2 and 12 byli charakterizovány cyklickou voltammetrií a měřeními pH-citlivosti pomocí iontově citlivého polního tranzistoru. Data ukazují vytvoření povrchové vodivosti na diamantu, která je pH závislá (66 mV/pH). H+-zakonèení povrchu vytváří tunelovací mezeru, která brání elektronické interakci mezi elektrolytem a diamantem (cs)
Title
  • Electronic properties of H-terminated diamond in electrolyte solutions
  • Elektronické vlastnosti H-zakončeného diamantu v elektrolytických roztocích (cs)
  • Electronic properties of H-terminated diamond in electrolyte solutions (en)
skos:prefLabel
  • Electronic properties of H-terminated diamond in electrolyte solutions
  • Elektronické vlastnosti H-zakončeného diamantu v elektrolytických roztocích (cs)
  • Electronic properties of H-terminated diamond in electrolyte solutions (en)
skos:notation
  • RIV/68378271:_____/06:00079099!RIV07-AV0-68378271
http://linked.open.../vavai/riv/strany
  • 033711/1;033711/4
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika
  • 3
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 473822
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/06:00079099
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • surface conductivity; electrochemical analytical methods; electrical properties of semiconductor–electrolyte contacts (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [D784C3CC1FBA]
http://linked.open...i/riv/nazevZdroje
  • Journal of Applied Physics
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 99
http://linked.open...iv/tvurceVysledku
  • Rezek, Bohuslav
  • Watanabe, H.
  • Yamamoto, T.
  • Nebel, C. E.
  • Shin, D.
http://linked.open...n/vavai/riv/zamer
issn
  • 0021-8979
number of pages
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