About: Surface electronic properties of H-terminated diamond in contact with adsorbates and electrolytes     Goto   Sponge   NotDistinct   Permalink

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Description
  • Obsáhlé shrnutí elektronických vlastností vodíkem zakončeného povrchu nedotovaného diamantu pokrytého adsorbáty nebo v roztoku elektrolytu. Utváření a vlastnosti vodivé vrstvy na povrchu jsou charakterizovány meřením Hallova jevu, vodivosti, rozdílem kontaktních potenciálù, rastrovací elektronovou mikroskopií a cyklickou voltammetrií (cs)
  • A comprehensive summary of surface electronic properties of undoped hydrogen terminated diamond covered with adsorbates or in electrolyte solutions is given. The formation and properties of a conductive layer at the surface is characterized using Hall effect, conductivity, contact potential difference, scanning electron microscopy, and cyclic voltammetry experiments
  • A comprehensive summary of surface electronic properties of undoped hydrogen terminated diamond covered with adsorbates or in electrolyte solutions is given. The formation and properties of a conductive layer at the surface is characterized using Hall effect, conductivity, contact potential difference, scanning electron microscopy, and cyclic voltammetry experiments (en)
Title
  • Surface electronic properties of H-terminated diamond in contact with adsorbates and electrolytes
  • Surface electronic properties of H-terminated diamond in contact with adsorbates and electrolytes (en)
  • Elektronické vlastnosti vodíkem zakončeného povrchu diamantu v kontaktu s adsorbáty a elektrolyty (cs)
skos:prefLabel
  • Surface electronic properties of H-terminated diamond in contact with adsorbates and electrolytes
  • Surface electronic properties of H-terminated diamond in contact with adsorbates and electrolytes (en)
  • Elektronické vlastnosti vodíkem zakončeného povrchu diamantu v kontaktu s adsorbáty a elektrolyty (cs)
skos:notation
  • RIV/68378271:_____/06:00079054!RIV07-AV0-68378271
http://linked.open.../vavai/riv/strany
  • 3273;3298
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika
  • 13
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 502544
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/06:00079054
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • semiconductor surfaces; surface states; field effect devices (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV
  • [D94725E8C5E9]
http://linked.open...i/riv/nazevZdroje
  • Physica Status Solidi. A
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 203
http://linked.open...iv/tvurceVysledku
  • Rezek, Bohuslav
  • Watanabe, H.
  • Nebel, C. E.
  • Shin, D.
http://linked.open...n/vavai/riv/zamer
issn
  • 0031-8965
number of pages
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