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  • Hydrogenated amorphous silicon oxycarbide (a-SiOC:H) thin films were deposited on silicon wafers from vinyltriethoxysilane(VTES) precursor. The elemental comosition of thin films were studied by conventional and resonant Rutherford Bacscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA) methods. The Si, C. and O bulk content was correlated with surface one determined from analyses of the photoelectron spectra using XPS
  • Hydrogenated amorphous silicon oxycarbide (a-SiOC:H) thin films were deposited on silicon wafers from vinyltriethoxysilane(VTES) precursor. The elemental comosition of thin films were studied by conventional and resonant Rutherford Bacscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA) methods. The Si, C. and O bulk content was correlated with surface one determined from analyses of the photoelectron spectra using XPS (en)
  • Tenké vrstvy hydrogenovaného amorfního oxikarbidu křemíku (a-SiOC:H) byly deponovány na křemíkové podložky z prekurzoru VTES. Složení tenkých vrstev bylo studováno běžnou a resonanční metodou RBS a ERDA. Objemové koncentrace Si, C a O byly porovnány s povrchově citlivými údaji z XPS (cs)
Title
  • Basic characteristics of the a-SiOC:H thin films prepared by PE CVD
  • Basic characteristics of the a-SiOC:H thin films prepared by PE CVD (en)
  • Charakterizace tenkých vrstev a-SiOC:H připravených metodou PECVD (cs)
skos:prefLabel
  • Basic characteristics of the a-SiOC:H thin films prepared by PE CVD
  • Basic characteristics of the a-SiOC:H thin films prepared by PE CVD (en)
  • Charakterizace tenkých vrstev a-SiOC:H připravených metodou PECVD (cs)
skos:notation
  • RIV/68378271:_____/04:00104229!RIV/2005/AV0/A02005/N
http://linked.open.../vavai/riv/strany
  • C937;C942
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA104/03/0236), P(KSK1010104), P(ME 597), P(OC 527.110), Z(AV0Z1010914)
http://linked.open...iv/cisloPeriodika
  • Suppl. C
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 555847
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/04:00104229
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • vinyltriethoxysilane; thin film; PECVD (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [7CD4F892536A]
http://linked.open...i/riv/nazevZdroje
  • Czechoslovak Journal of Physics
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 54
http://linked.open...iv/tvurceVysledku
  • Peřina, Vratislav
  • Zemek, Josef
  • Přikryl, R.
  • Vaněk, J.
  • Čech, V.
http://linked.open...n/vavai/riv/zamer
issn
  • 0011-4626
number of pages
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