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Description
  • Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperature (above 25oC). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range
  • Contribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperature (above 25oC). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation range (en)
  • Příspěvek obsahuje elektroluminiscenční, fotoabsorpční a polarizační vlastnosti polovodičových laserů s tenkými napjatými vrstvami InAs v GaAs při zvýšených teplotách (nad 25o C). Tyto lasery vykazují vysokou účinnost zářivé rekombinace, nízkou prahovou proudovou hustotu a široký obor pracovních teplot (cs)
Title
  • Lasery s tenkými InAs vrstvami v GaAs - absorpce a elektroluminiscence (cs)
  • Lasers with thin strained InAs layers in GaAs absorption and electroluminescence
  • Lasers with thin strained InAs layers in GaAs absorption and electroluminescence (en)
skos:prefLabel
  • Lasery s tenkými InAs vrstvami v GaAs - absorpce a elektroluminiscence (cs)
  • Lasers with thin strained InAs layers in GaAs absorption and electroluminescence
  • Lasers with thin strained InAs layers in GaAs absorption and electroluminescence (en)
skos:notation
  • RIV/68378271:_____/03:00100041!RIV/2005/AV0/A02005/N
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  • EI20;EI21
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  • P(IAA1010318), Z(AV0Z1010914)
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  • 613232
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  • RIV/68378271:_____/03:00100041
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  • strained quantum well; InAs; GaAs; polarisation; electroluminescence; photoabsorption (en)
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  • [208CF02C2162]
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  • Praha
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  • Praha
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  • Proceedings of the International Student Conference on Electrical Engineering
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  • Mačkal, Adam
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number of pages
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  • České vysoké učení technické v Praze. Fakulta elektrotechnická
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