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  • Dopants in sillicon based structures locally modifty the secondary electron emission, revealing in this way their distribution over the sample. For probing the doped structures usually the elctron beam is used at energies around 1keV. However, the very low landing energy range has proven itself an effecient tool for mapping dopant in semiconductors.
  • Dopants in sillicon based structures locally modifty the secondary electron emission, revealing in this way their distribution over the sample. For probing the doped structures usually the elctron beam is used at energies around 1keV. However, the very low landing energy range has proven itself an effecient tool for mapping dopant in semiconductors. (en)
Title
  • Mapping of dopants in silicon by electron injection
  • Mapping of dopants in silicon by electron injection (en)
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  • Mapping of dopants in silicon by electron injection
  • Mapping of dopants in silicon by electron injection (en)
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  • RIV/68081731:_____/12:00386449!RIV13-AV0-68081731
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  • RIV/68081731:_____/12:00386449
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  • mapping of dopants in sillicon; electron injection (en)
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  • Physic and Nanoscale. (Proceedings of the 10th IUVSTA International Summer School )
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  • Konvalina, Ivo
  • Mikulík, P.
  • Hovorka, Miloš
  • Frank, Luděk
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  • IOP AS CR
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  • 978-80-260-0619-0
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