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Description
  • Signal trajectories of secondary (SE) and backscattered electrons (BSE) were simulated for two cases: an immersion magnetic objective lens alone and for the case when an electrostatic immersion objective lens is added. Micrographs of a semiconductor structure are presented for these two set-ups.
  • Signal trajectories of secondary (SE) and backscattered electrons (BSE) were simulated for two cases: an immersion magnetic objective lens alone and for the case when an electrostatic immersion objective lens is added. Micrographs of a semiconductor structure are presented for these two set-ups. (en)
Title
  • Approaches to the Collection Contrast in the Immersion Objective Lens of the Scanning Electron Microscope
  • Approaches to the Collection Contrast in the Immersion Objective Lens of the Scanning Electron Microscope (en)
skos:prefLabel
  • Approaches to the Collection Contrast in the Immersion Objective Lens of the Scanning Electron Microscope
  • Approaches to the Collection Contrast in the Immersion Objective Lens of the Scanning Electron Microscope (en)
skos:notation
  • RIV/68081731:_____/12:00379916!RIV12-AV0-68081731
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  • I, P(FR-TI3/323)
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  • 123473
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  • RIV/68081731:_____/12:00379916
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  • scanning electron microscopy; cathode lens; secondary electrons; backscattered electrons (en)
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  • [FCD81EE5A258]
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  • Perth
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  • Wembley
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  • Coneference Proceedings APMC-10, ICONN 2012 and ACMM-22
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  • Konvalina, Ivo
  • Hovorka, Miloš
  • Müllerová, Ilona
  • Mika, Filip
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number of pages
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  • EECW Pty Ltd
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  • 978-1-74052-245-8
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