About: Two-dimensional dopant profiling with low energy SEM

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Rastrovací elektronový mikroskop se osvědčil jako nástroj pro zjištění koncentrace dopantu v polovodičích. Kontrast mezi rozdílně dopovanými oblastmi je pozorován v obraze sekundárních elektronů. Kvantitativním vztahem mezi obrazovým kontrastem a koncentrací dopantu se zabývá více studií. Podrobný výzkum však ukázal nízkou reprodukovatelnost úrovně kontrastu mezi rozdílně dopovanými strukturami. V článku je ukázáno dynamické chování kontrastu dopantu a jeho závislost na stavu povrchu vzorku. (cs) The scanning electron microscope has proven itself efficient for determining dopant concentrations in semiconductors. Contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, intimate examination shows a low reproducibility of the contrast level for a particular local difference between the doping rates. Data about dynamic behaviour of the dopant contrast and its dependence on the status of the sample surface are presented. The scanning electron microscope has proven itself efficient for determining dopant concentrations in semiconductors. Contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, intimate examination shows a low reproducibility of the contrast level for a particular local difference between the doping rates. Data about dynamic behaviour of the dopant contrast and its dependence on the status of the sample surface are presented. (en)
Title	Two-dimensional dopant profiling with low energy SEM Two-dimensional dopant profiling with low energy SEM (en) Tvorba dvourozměrných profilů dopantu s níkoenergiovým SEM (cs)
skos:prefLabel	Two-dimensional dopant profiling with low energy SEM Two-dimensional dopant profiling with low energy SEM (en) Tvorba dvourozměrných profilů dopantu s níkoenergiovým SEM (cs)
skos:notation	RIV/68081731:_____/08:00308202!RIV08-GA0-68081731
http://linked.open.../vavai/riv/strany	76;83
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/05/2327), Z(AV0Z20650511)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Mika, Filip Frank, Luděk
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav přístrojové techniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	400988
http://linked.open...ai/riv/idVysledku	RIV/68081731:_____/08:00308202
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	dopant contrast; low energy SEM; semiconductors (en)
http://linked.open.../riv/klicoveSlovo	dopant contrast semiconductors low energy SEM
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[F912B48CC1FE]
http://linked.open...i/riv/nazevZdroje	Journal of Microscopy
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...vavai/riv/projekt	Direct imaging of the dopant distribution in a semiconductor by means of low energy clectrons
http://linked.open...UplatneniVysledku	2008
http://linked.open...v/svazekPeriodika	230
http://linked.open...iv/tvurceVysledku	Frank, Luděk Mika, Filip
http://linked.open...n/vavai/riv/zamer	Research into experimental methods for examination of the physical properties of matter and their application in advanced technologies
issn	0022-2720
number of pages	8 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Two-dimensional dopant profiling with low energy SEM Two-dimensional dopant profiling with low energy SEM Two-dimensional dopant profiling with low energy SEM Two-dimensional dopant profiling with low energy SEM

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