About: Secondary electron contrast of dopped regions in semiconductor

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About: Secondary electron contrast of dopped regions in semiconductor - a matter of surface treatment? Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayers but recently also in plan views of patterneddoping of a technological layer, is acquiring high interest because of its straightforward application in the semiconductor technology. Plenty of experimental data has been collected [1-4] from conventional SEM observation and recently first results showed improved contrasts attainable with specimen immersed into electric field. Main features are the sign of contrast- the p-type regions are always brighter than the n-type ones, and the contrast grows toward lower energies. Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayers but recently also in plan views of patterneddoping of a technological layer, is acquiring high interest because of its straightforward application in the semiconductor technology. Plenty of experimental data has been collected [1-4] from conventional SEM observation and recently first results showed improved contrasts attainable with specimen immersed into electric field. Main features are the sign of contrast- the p-type regions are always brighter than the n-type ones, and the contrast grows toward lower energies. (en)
Title	Secondary electron contrast of dopped regions in semiconductor - a matter of surface treatment? Secondary electron contrast of dopped regions in semiconductor - a matter of surface treatment? (en)
skos:prefLabel	Secondary electron contrast of dopped regions in semiconductor - a matter of surface treatment? Secondary electron contrast of dopped regions in semiconductor - a matter of surface treatment? (en)
skos:notation	RIV/68081731:_____/02:12020053!RIV/2003/AV0/A12003/N
http://linked.open.../vavai/riv/strany	25 ; 26
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(IAA1065901), Z(AV0Z2065902)
http://linked.open...vai/riv/dodaniDat	2003
http://linked.open...aciTvurceVysledku	Müllerová, Ilona Frank, Luděk
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav přístrojové techniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	663126
http://linked.open...ai/riv/idVysledku	RIV/68081731:_____/02:12020053
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	semiconductor technology; lower energies; multilayers (en)
http://linked.open.../riv/klicoveSlovo	multilayers semiconductor technology lower energies
http://linked.open...ontrolniKodProRIV	[F51F86264F4A]
http://linked.open...v/mistoKonaniAkce	Skalský dvůr [CZ]
http://linked.open...i/riv/mistoVydani	Brno
http://linked.open...i/riv/nazevZdroje	Proceedings of the 8.sup.th./sup. international seminar, held in Skalský dvůr.
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...vavai/riv/projekt	Wave-optical contrasts in the scanning electron microscope
http://linked.open...UplatneniVysledku	2002
http://linked.open...iv/tvurceVysledku	Müllerová, Ilona Frank, Luděk El-Gomati, M.
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2002-07-08 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Rozvoj fyzikálních metod, speciálních technologií a přístrojových principů využívajících elektronových a světelných svazků a radiofrekvenční spektroskopie
number of pages	2 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Ústav přístrojové techniky AV ČR
https://schema.org/isbn	80-238-8986-9

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