About: Study of oxide precipitates in silicon using X-ray diffraction techniques

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The results of a study of oxide precipitates in Czochralski (CZ) grown silicon using two X-ray diffraction methods are reported. The diffuse scattering around the Bragg diffraction maxima was measured on a series of samples after various two-stage annealing treatment. Combining the analysis of diffuse scattering with other experimental techniques we were able to determine mean precipitate size and deformation field around the precipitates. The obtained data show that the deformation field is proportional to the precipitate volume and independent on the annealing temperature or annealing time. The dynamical diffraction in Laue geometry was used to measure precipitate concentration. The results are compared to the selective etching concentration measurement. The results of a study of oxide precipitates in Czochralski (CZ) grown silicon using two X-ray diffraction methods are reported. The diffuse scattering around the Bragg diffraction maxima was measured on a series of samples after various two-stage annealing treatment. Combining the analysis of diffuse scattering with other experimental techniques we were able to determine mean precipitate size and deformation field around the precipitates. The obtained data show that the deformation field is proportional to the precipitate volume and independent on the annealing temperature or annealing time. The dynamical diffraction in Laue geometry was used to measure precipitate concentration. The results are compared to the selective etching concentration measurement. (en)
Title	Study of oxide precipitates in silicon using X-ray diffraction techniques Study of oxide precipitates in silicon using X-ray diffraction techniques (en)
skos:prefLabel	Study of oxide precipitates in silicon using X-ray diffraction techniques Study of oxide precipitates in silicon using X-ray diffraction techniques (en)
skos:notation	RIV/68081723:_____/11:00371107!RIV12-AV0-68081723
http://linked.open...avai/predkladatel	Ústav fyziky materiálů AVČR, v.v.i.
http://linked.open...avai/riv/aktivita	P S Z
http://linked.open...avai/riv/aktivity	P(GA202/09/1013), P(GP202/09/P410), S, Z(AV0Z20410507), Z(MSM0021622410)
http://linked.open...iv/cisloPeriodika	11
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Svoboda, Milan Buršík, Jiří
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fyziky materiálů AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	233093
http://linked.open...ai/riv/idVysledku	RIV/68081723:_____/11:00371107
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	high-resolution X-ray diffraction; oxide precipitates; silicon (en)
http://linked.open.../riv/klicoveSlovo	high-resolution X-ray diffraction oxide precipitates silicon
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[3844E0B7C0CD]
http://linked.open...i/riv/nazevZdroje	Physica Status Solidi. A
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Strain engineering in diluted magnetic semiconductors Nucleation and growth of oxygen precipitates in silicon
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	208
http://linked.open...iv/tvurceVysledku	Bernatová, S. Buršík, Jiří Svoboda, Milan Caha, O. Meduňa, M.
http://linked.open...ain/vavai/riv/wos	000297514200018
http://linked.open...n/vavai/riv/zamer	Physical properties of advanced materials in relation to their microstructure and processing Physical and chemical properties of advanced materials and structures
issn	1862-6300
number of pages	4 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Study of oxide precipitates in silicon using X-ray diffraction techniques Study of oxide precipitates in silicon using X-ray diffraction techniques

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