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  • Two x-ray diffraction methods were used for characterization of the oxide precipitates in Czochralski silicon series of samples. The maping of the diffuse scattering around reciprocal lattice point in Bragg geometry and the simultaneous measurement of the diffracted and transmitted beam intensity in the Laue diffraction geometry.
  • Two x-ray diffraction methods were used for characterization of the oxide precipitates in Czochralski silicon series of samples. The maping of the diffuse scattering around reciprocal lattice point in Bragg geometry and the simultaneous measurement of the diffracted and transmitted beam intensity in the Laue diffraction geometry. (en)
Title
  • X-ray scattering study of oxide precipitates in Cz-Si
  • X-ray scattering study of oxide precipitates in Cz-Si (en)
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  • X-ray scattering study of oxide precipitates in Cz-Si
  • X-ray scattering study of oxide precipitates in Cz-Si (en)
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  • RIV/68081723:_____/10:00421391!RIV14-AV0-68081723
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  • 299059
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  • RIV/68081723:_____/10:00421391
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  • x-ray; silicon; defects (en)
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  • [783F817716F8]
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  • Rožnov pod Radhoštěm
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  • Rožnov pod Radhoštěm
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  • SILICON 2010. 12th Scientific and Business Conference
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  • Bernatová, S.
  • Buršík, Jiří
  • Svoboda, Milan
  • Bernstorff, S.
  • Mikulík, P.
  • Caha, O.
  • Meduňa, M.
  • Růžička, J.
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  • TECON Scientific, s.r.o.
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  • 978-80-254-7361-0
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