About: Improved speed of hydrogen detection by Schottky diodes on InP with electrophoretically deposited Pt nanoparticles and graphite contacts

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About: Improved speed of hydrogen detection by Schottky diodes on InP with electrophoretically deposited Pt nanoparticles and graphite contacts Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The electrophoretic deposition (EPD) of nanoparticles (NPs) of the catalytic metal platinum (Pt) onto semiconductor wafers of indium phosphide (InP) from colloid solution in isooctane was studied at room temperature. The colloid solution for EPD was prepared by the chemical reduction of water solutions of the metal salts, confined to AOT reverse micelles in isooctane with hydrazine reducing agent. Four EPD-cast samples of Pt NPs were prepared on polished n-type InP wafers with varying times of deposition. The sheet density of Pt NPs varied from approximately 10% coverage of the substrate to 100% coverage of the substrate by several monolayers of Pt NPs, as observed by SEM. EPD was performed on a masked surface, enabling to make separated small deposited spots. Schottky contacts were made on the deposited spots by printing the contacts with colloidal graphite. The time response of the current to a 0.1% hydrogen exposure exhibited a continuous increase of saturation current and a decrease of the response time with increasing Pt NPs sheet density. Layers of Pt NPs were also prepared on p-type InP wafers. The current of the p-type InP diodes was observed to decrease with the exposure to hydrogen; its decrease was much smaller than the increase of current in n-type InP diodes. This demonstrates that two mechanisms are involved in formation of the hydrogen dipole layer. We have suggested the increase in hydrogen affinity by correlation effects as the second mechanism added to the well known hydrogen polarization by the electric field of the Schottky barrier. The electrophoretic deposition (EPD) of nanoparticles (NPs) of the catalytic metal platinum (Pt) onto semiconductor wafers of indium phosphide (InP) from colloid solution in isooctane was studied at room temperature. The colloid solution for EPD was prepared by the chemical reduction of water solutions of the metal salts, confined to AOT reverse micelles in isooctane with hydrazine reducing agent. Four EPD-cast samples of Pt NPs were prepared on polished n-type InP wafers with varying times of deposition. The sheet density of Pt NPs varied from approximately 10% coverage of the substrate to 100% coverage of the substrate by several monolayers of Pt NPs, as observed by SEM. EPD was performed on a masked surface, enabling to make separated small deposited spots. Schottky contacts were made on the deposited spots by printing the contacts with colloidal graphite. The time response of the current to a 0.1% hydrogen exposure exhibited a continuous increase of saturation current and a decrease of the response time with increasing Pt NPs sheet density. Layers of Pt NPs were also prepared on p-type InP wafers. The current of the p-type InP diodes was observed to decrease with the exposure to hydrogen; its decrease was much smaller than the increase of current in n-type InP diodes. This demonstrates that two mechanisms are involved in formation of the hydrogen dipole layer. We have suggested the increase in hydrogen affinity by correlation effects as the second mechanism added to the well known hydrogen polarization by the electric field of the Schottky barrier. (en)
Title	Improved speed of hydrogen detection by Schottky diodes on InP with electrophoretically deposited Pt nanoparticles and graphite contacts Improved speed of hydrogen detection by Schottky diodes on InP with electrophoretically deposited Pt nanoparticles and graphite contacts (en)
skos:prefLabel	Improved speed of hydrogen detection by Schottky diodes on InP with electrophoretically deposited Pt nanoparticles and graphite contacts Improved speed of hydrogen detection by Schottky diodes on InP with electrophoretically deposited Pt nanoparticles and graphite contacts (en)
skos:notation	RIV/67985882:_____/13:00396642!RIV14-MSM-67985882
http://linked.open...avai/predkladatel	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(OC10021)
http://linked.open...iv/cisloPeriodika	184
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Žďánský, Karel
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	79296
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/13:00396642
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Metal nanoparticles; Keyed electrophoresis; Hydrogen sensors (en)
http://linked.open.../riv/klicoveSlovo	Metal nanoparticles Hydrogen sensors Keyed electrophoresis
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[D93AEEA399D0]
http://linked.open...i/riv/nazevZdroje	Sensors and Actuators B - Chemical
http://linked.open...in/vavai/riv/obor	JB
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...vavai/riv/projekt	Study of metal nanoparticle layers deposited by electrophoresis on semiconductor III-V-N compounds
http://linked.open...UplatneniVysledku	2013
http://linked.open...iv/tvurceVysledku	Žďánský, Karel Dickerson, J. H.
http://linked.open...ain/vavai/riv/wos	000319869700041
issn	0925-4005
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.snb.2013.04.099

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