About: Preparation of nanoporous GaAs substrates for epitaxial growth

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We report on the electrochemical preparation of porous GaAs substrates suited for the lattice mismatched epitaxial growth. We show that surfaces with different pore diameter, pore spacing and surface roughness can be achieved by careful selection of the etching regime, electrolyte, and substrate We report on the electrochemical preparation of porous GaAs substrates suited for the lattice mismatched epitaxial growth. We show that surfaces with different pore diameter, pore spacing and surface roughness can be achieved by careful selection of the etching regime, electrolyte, and substrate (en)
Title	Preparation of nanoporous GaAs substrates for epitaxial growth Preparation of nanoporous GaAs substrates for epitaxial growth (en)
skos:prefLabel	Preparation of nanoporous GaAs substrates for epitaxial growth Preparation of nanoporous GaAs substrates for epitaxial growth (en)
skos:notation	RIV/67985882:_____/12:00387641!RIV13-AV0-67985882
http://linked.open...avai/predkladatel	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GAP108/10/0253)
http://linked.open...iv/cisloPeriodika	7
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Grym, Jan Nohavica, Dušan Vaniš, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	161352
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/12:00387641
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	semiconductor technology; porous semiconductors; epitaxial growth (en)
http://linked.open.../riv/klicoveSlovo	porous semiconductors epitaxial growth semiconductor technology
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[7486090DDF21]
http://linked.open...i/riv/nazevZdroje	Physica Status Solidi C: Current Topics in Solid State Physics
http://linked.open...in/vavai/riv/obor	JJ
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	9
http://linked.open...iv/tvurceVysledku	Grym, Jan Nohavica, Dušan Piksová, K. Vaniš, Jan
http://linked.open...ain/vavai/riv/wos	000306479300001
issn	1862-6351
number of pages	3 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Preparation of nanoporous GaAs substrates for epitaxial growth

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