About: Analysis of the resonant tunneling diode with the stepped pre-barrier

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Resonant-tunnelling diodes (RTD) incorporating an emitter stepped pre-barrier are studied both theoretically and experimentally. The simulation of I-V characteristics of modified AlAs-GaAs double barrier RTD grown by molecular beam epitaxy with the stepped pre-barrier is presented. An 1D quantum transport simulator Wingreen based on the nonequilibrium Green functions (NEGF) is used in our case. Our result show that the coupling between energy levels in the emitter quantum-well and the main quantum well leads to the plateau behaviour of the I-V curves. The two plateau regions on the I-V characteristics have been observed in experimental and simulation results. Resonant-tunnelling diodes (RTD) incorporating an emitter stepped pre-barrier are studied both theoretically and experimentally. The simulation of I-V characteristics of modified AlAs-GaAs double barrier RTD grown by molecular beam epitaxy with the stepped pre-barrier is presented. An 1D quantum transport simulator Wingreen based on the nonequilibrium Green functions (NEGF) is used in our case. Our result show that the coupling between energy levels in the emitter quantum-well and the main quantum well leads to the plateau behaviour of the I-V curves. The two plateau regions on the I-V characteristics have been observed in experimental and simulation results. (en)
Title	Analysis of the resonant tunneling diode with the stepped pre-barrier Analysis of the resonant tunneling diode with the stepped pre-barrier (en)
skos:prefLabel	Analysis of the resonant tunneling diode with the stepped pre-barrier Analysis of the resonant tunneling diode with the stepped pre-barrier (en)
skos:notation	RIV/67985882:_____/09:00346107!RIV11-AV0-67985882
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(KAN401220801), P(KJB200670901), Z(AV0Z20670512), Z(MSM6840770014)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Yatskiv, Roman
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	302964
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/09:00346107
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Resonant tunneling diodes; Nonequilibrium Green functions; Hysteresis (en)
http://linked.open.../riv/klicoveSlovo	Nonequilibrium Green functions Resonant tunneling diodes Hysteresis
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[66905A000017]
http://linked.open...i/riv/nazevZdroje	Journal of Physics: Conference Series
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...vavai/riv/projekt	Role of transition metals and rare-earth elements in preparation of InP-based materials for radiation detectors. Nanostructures of Controlled Size and Dimensions
http://linked.open...UplatneniVysledku	2009
http://linked.open...v/svazekPeriodika	193
http://linked.open...iv/tvurceVysledku	Yatskiv, Roman Voves, J.
http://linked.open...ain/vavai/riv/wos	000277100400007
http://linked.open...n/vavai/riv/zamer	Materiály, struktury, systémy a signály v elektronice, optoelektronice a fotonice Výzkum perspektivních informačních a komunikačních technologií
issn	1742-6588
number of pages	4 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Analysis of the resonant tunneling diode with the stepped pre-barrier Analysis of the resonant tunneling diode with the stepped pre-barrier Analysis of the resonant tunneling diode with the stepped pre-barrier

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