Attributes | Values |
---|
rdf:type
| |
Description
| - InP crystals were synthesized with a Ta admixture grown by the Czochralski technique, and wafers cut from the grown crystals were converted to the SI state by high-temperature annealing. The good detection performance of such material-based detectors has been tested with alpha-particles from a Am-241 source (5.48 MeV). The charge collection efficiency (CCE) of 84% and relative energy resolution at full width at half maximum (FWHM) of 5% were obtained at room temperature 295 K (RT). Low-energy gamma-photons of 122 keV from a Co-57 source and gamma-photons from a Cs-137 source were detected at 242 K, 272 K, and 295 K, respectively. The values of CCE 88% and FWHM 16 keV of 122 keV photons and CCE 87% and FWHM 48 keV of gamma-photons of 662 keV were obtained at reduced temperatures. A pulse-height spectrum of 662 keV gamma-photons registered at room temperature is also shown in this work.
- InP crystals were synthesized with a Ta admixture grown by the Czochralski technique, and wafers cut from the grown crystals were converted to the SI state by high-temperature annealing. The good detection performance of such material-based detectors has been tested with alpha-particles from a Am-241 source (5.48 MeV). The charge collection efficiency (CCE) of 84% and relative energy resolution at full width at half maximum (FWHM) of 5% were obtained at room temperature 295 K (RT). Low-energy gamma-photons of 122 keV from a Co-57 source and gamma-photons from a Cs-137 source were detected at 242 K, 272 K, and 295 K, respectively. The values of CCE 88% and FWHM 16 keV of 122 keV photons and CCE 87% and FWHM 48 keV of gamma-photons of 662 keV were obtained at reduced temperatures. A pulse-height spectrum of 662 keV gamma-photons registered at room temperature is also shown in this work. (en)
|
Title
| - Detectors of Gamma Rays and Alpha Particles Based on Ta-Doped InP Converted to the Semi-Insulating State by Annealing
- Detectors of Gamma Rays and Alpha Particles Based on Ta-Doped InP Converted to the Semi-Insulating State by Annealing (en)
|
skos:prefLabel
| - Detectors of Gamma Rays and Alpha Particles Based on Ta-Doped InP Converted to the Semi-Insulating State by Annealing
- Detectors of Gamma Rays and Alpha Particles Based on Ta-Doped InP Converted to the Semi-Insulating State by Annealing (en)
|
skos:notation
| - RIV/67985882:_____/09:00341437!RIV10-AV0-67985882
|
http://linked.open...avai/riv/aktivita
| |
http://linked.open...avai/riv/aktivity
| - P(IBS2067354), P(KAN400670651), P(KAN401220801), Z(AV0Z10100520), Z(AV0Z20670512)
|
http://linked.open...iv/cisloPeriodika
| |
http://linked.open...vai/riv/dodaniDat
| |
http://linked.open...aciTvurceVysledku
| |
http://linked.open.../riv/druhVysledku
| |
http://linked.open...iv/duvernostUdaju
| |
http://linked.open...titaPredkladatele
| |
http://linked.open...dnocenehoVysledku
| |
http://linked.open...ai/riv/idVysledku
| - RIV/67985882:_____/09:00341437
|
http://linked.open...riv/jazykVysledku
| |
http://linked.open.../riv/klicovaSlova
| - radiation detection; semiconductor doping; crystal growth (en)
|
http://linked.open.../riv/klicoveSlovo
| |
http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
|
http://linked.open...ontrolniKodProRIV
| |
http://linked.open...i/riv/nazevZdroje
| - IEEE Transactions on Nuclear Science
|
http://linked.open...in/vavai/riv/obor
| |
http://linked.open...ichTvurcuVysledku
| |
http://linked.open...cetTvurcuVysledku
| |
http://linked.open...vavai/riv/projekt
| |
http://linked.open...UplatneniVysledku
| |
http://linked.open...v/svazekPeriodika
| |
http://linked.open...iv/tvurceVysledku
| - Žďánský, Karel
- Pekárek, Ladislav
- Gorodynskyy, Vladyslav
|
http://linked.open...ain/vavai/riv/wos
| |
http://linked.open...n/vavai/riv/zamer
| |
issn
| |
number of pages
| |
is http://linked.open...avai/riv/vysledek
of | |