Attributes | Values |
---|
rdf:type
| |
Description
| - The influence of Yb and Yb2O3 additions into the LPE growth melt on the properties of InP epitaxial layers is reported. We have concentrated on the investigation of gettering and/or doping effects. Efficient gettering was confirmed for both Yb and Yb2O3 addition, the incorporation of Yb3+ into the InP lattice was confirmed only for Yb addition. Layers grown with Yb addition exhibited n -> p conductivity conversion at certain Yb concentration. Dominant acceptor, responsible for n -> p conductivity conversion was identified as the isoelectronic Yb impurity on the In site. Layers grown with Yb2O3 admixture always show n-type electrical conductivity.
- The influence of Yb and Yb2O3 additions into the LPE growth melt on the properties of InP epitaxial layers is reported. We have concentrated on the investigation of gettering and/or doping effects. Efficient gettering was confirmed for both Yb and Yb2O3 addition, the incorporation of Yb3+ into the InP lattice was confirmed only for Yb addition. Layers grown with Yb addition exhibited n -> p conductivity conversion at certain Yb concentration. Dominant acceptor, responsible for n -> p conductivity conversion was identified as the isoelectronic Yb impurity on the In site. Layers grown with Yb2O3 admixture always show n-type electrical conductivity. (en)
|
Title
| - Influence of Yb AND Yb2O3 addition on the properties of InP layers
- Influence of Yb AND Yb2O3 addition on the properties of InP layers (en)
|
skos:prefLabel
| - Influence of Yb AND Yb2O3 addition on the properties of InP layers
- Influence of Yb AND Yb2O3 addition on the properties of InP layers (en)
|
skos:notation
| - RIV/67985882:_____/08:00341490!RIV11-GA0-67985882
|
http://linked.open...avai/riv/aktivita
| |
http://linked.open...avai/riv/aktivity
| - P(GA102/06/0153), P(GP102/08/P617), Z(AV0Z20670512)
|
http://linked.open...iv/cisloPeriodika
| |
http://linked.open...vai/riv/dodaniDat
| |
http://linked.open...aciTvurceVysledku
| |
http://linked.open.../riv/druhVysledku
| |
http://linked.open...iv/duvernostUdaju
| |
http://linked.open...titaPredkladatele
| |
http://linked.open...dnocenehoVysledku
| |
http://linked.open...ai/riv/idVysledku
| - RIV/67985882:_____/08:00341490
|
http://linked.open...riv/jazykVysledku
| |
http://linked.open.../riv/klicovaSlova
| - semiconductor technology; rare earth elements; InP (en)
|
http://linked.open.../riv/klicoveSlovo
| |
http://linked.open...odStatuVydavatele
| |
http://linked.open...ontrolniKodProRIV
| |
http://linked.open...i/riv/nazevZdroje
| - Journal of Optoelectronics and Advanced Materials
|
http://linked.open...in/vavai/riv/obor
| |
http://linked.open...ichTvurcuVysledku
| |
http://linked.open...cetTvurcuVysledku
| |
http://linked.open...vavai/riv/projekt
| |
http://linked.open...UplatneniVysledku
| |
http://linked.open...v/svazekPeriodika
| |
http://linked.open...iv/tvurceVysledku
| - Grym, Jan
- Zavadil, Jiří
- Žďánský, Karel
- Procházková, Olga
- Lorinčík, Jan
|
http://linked.open...ain/vavai/riv/wos
| |
http://linked.open...n/vavai/riv/zamer
| |
issn
| |
number of pages
| |
is http://linked.open...avai/riv/vysledek
of | |