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  • The influence of Yb and Yb2O3 additions into the LPE growth melt on the properties of InP epitaxial layers is reported. We have concentrated on the investigation of gettering and/or doping effects. Efficient gettering was confirmed for both Yb and Yb2O3 addition, the incorporation of Yb3+ into the InP lattice was confirmed only for Yb addition. Layers grown with Yb addition exhibited n -> p conductivity conversion at certain Yb concentration. Dominant acceptor, responsible for n -> p conductivity conversion was identified as the isoelectronic Yb impurity on the In site. Layers grown with Yb2O3 admixture always show n-type electrical conductivity.
  • The influence of Yb and Yb2O3 additions into the LPE growth melt on the properties of InP epitaxial layers is reported. We have concentrated on the investigation of gettering and/or doping effects. Efficient gettering was confirmed for both Yb and Yb2O3 addition, the incorporation of Yb3+ into the InP lattice was confirmed only for Yb addition. Layers grown with Yb addition exhibited n -> p conductivity conversion at certain Yb concentration. Dominant acceptor, responsible for n -> p conductivity conversion was identified as the isoelectronic Yb impurity on the In site. Layers grown with Yb2O3 admixture always show n-type electrical conductivity. (en)
Title
  • Influence of Yb AND Yb2O3 addition on the properties of InP layers
  • Influence of Yb AND Yb2O3 addition on the properties of InP layers (en)
skos:prefLabel
  • Influence of Yb AND Yb2O3 addition on the properties of InP layers
  • Influence of Yb AND Yb2O3 addition on the properties of InP layers (en)
skos:notation
  • RIV/67985882:_____/08:00341490!RIV11-GA0-67985882
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/06/0153), P(GP102/08/P617), Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika
  • 12
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 372361
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/08:00341490
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • semiconductor technology; rare earth elements; InP (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • RO - Rumunsko
http://linked.open...ontrolniKodProRIV
  • [35763CBF971F]
http://linked.open...i/riv/nazevZdroje
  • Journal of Optoelectronics and Advanced Materials
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 10
http://linked.open...iv/tvurceVysledku
  • Grym, Jan
  • Zavadil, Jiří
  • Žďánský, Karel
  • Procházková, Olga
  • Lorinčík, Jan
http://linked.open...ain/vavai/riv/wos
  • 000262022500024
http://linked.open...n/vavai/riv/zamer
issn
  • 1454-4164
number of pages
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