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  • Schottky diodes were studied by temperature dependent current–voltage, capacitance–voltage (C-V) and admitance spectra measurements. Current–voltage characteristics were fitted by considering thermionic emission, serial resistance of bulk InP and nonlinear serial resistance of the back contact of the diode. Schottky barrier height calculated from current–voltage characteristics was lower than the one calculated from C-V characteristics, which was prescribed to a strong density of surface states.
  • Schottky diodes were studied by temperature dependent current–voltage, capacitance–voltage (C-V) and admitance spectra measurements. Current–voltage characteristics were fitted by considering thermionic emission, serial resistance of bulk InP and nonlinear serial resistance of the back contact of the diode. Schottky barrier height calculated from current–voltage characteristics was lower than the one calculated from C-V characteristics, which was prescribed to a strong density of surface states. (en)
  • Schottkyho diody byly zkoumány měřením teplotně závislých charakteristik proud-napětí a kapacita-napětí a admitanční spektroskopií. Charakteristiky proud-napětí byly vypočteny s uvážením termiontové emise, seriového odporu objemu InP a nelineárního serivého odporu zadního kontaktu diody. Výška Schottkyho bariery vypočtená z charakteristik proud–napětí byla nižší než výška vypočtená z charakteristik kapacita-napětí, což bylo přičteno velké hustotě povrchových stavů. (cs)
Title
  • Study of Schottky diodes made on Mn doped p-type InP
  • Studium Šottkyho diod na InP dopovaném Mn (cs)
  • Study of Schottky diodes made on Mn doped p-type InP (en)
skos:prefLabel
  • Study of Schottky diodes made on Mn doped p-type InP
  • Studium Šottkyho diod na InP dopovaném Mn (cs)
  • Study of Schottky diodes made on Mn doped p-type InP (en)
skos:notation
  • RIV/67985882:_____/08:00323030!RIV09-AV0-67985882
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(KAN400670651), Z(AV0Z10100520), Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika
  • 1
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 398160
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/08:00323030
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Schottky effect; semiconductors; deep levels (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [ACD5E2397384]
http://linked.open...i/riv/nazevZdroje
  • Journal of Materials Science-Materials in Electronics
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 19
http://linked.open...iv/tvurceVysledku
  • Kozak, Halina
  • Žďánský, Karel
  • Pekárek, Ladislav
  • Sopko, B.
http://linked.open...ain/vavai/riv/wos
  • 000260288100068
http://linked.open...n/vavai/riv/zamer
issn
  • 0957-4522
number of pages
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