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Description
| - Pro realizaci struktur vhodných k detekci záření byly připraveny SI InP monokrystaly s p-typem vodivosti a čisté p-InP vrstvy. Pro růst SI InP monokrystalů byla použita metoda Czochralského s přídavkem Cu. Následným žíháním bylo dosaženo konverze na p-typ vodivosti. Pro růst p-InP vrstev byla použita metoda růstu z kapalné fáze s přídavkem Pr, Dy and Tb2O3. Byly navrženy tři typy detekčních struktur a porovnány jejich charakteristiky. (cs)
- We report the preparation of SI p-type conductivity InP single crystals and pure p-type InP layers for radiation detectors. We focus on (i) the growth of p-type InP single crystals by the Czochralski technique with Cu admixture and their subsequent temperature annealing to convert them to p-type SI state, and (ii) the growth of thick (> 10µm) p-type InP layers by LPE method with the addition of Pr, Dy and Tb2O3. Three types of detection structures were designed and their characteristics have been compared.
- We report the preparation of SI p-type conductivity InP single crystals and pure p-type InP layers for radiation detectors. We focus on (i) the growth of p-type InP single crystals by the Czochralski technique with Cu admixture and their subsequent temperature annealing to convert them to p-type SI state, and (ii) the growth of thick (> 10µm) p-type InP layers by LPE method with the addition of Pr, Dy and Tb2O3. Three types of detection structures were designed and their characteristics have been compared. (en)
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Title
| - InP based semioconductor structures for radiation detection
- InP based semioconductor structures for radiation detection (en)
- Polovodičové struktury na bázi InP pro detekci záření (cs)
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skos:prefLabel
| - InP based semioconductor structures for radiation detection
- InP based semioconductor structures for radiation detection (en)
- Polovodičové struktury na bázi InP pro detekci záření (cs)
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skos:notation
| - RIV/67985882:_____/08:00083003!RIV08-AV0-67985882
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA102/06/0153), Z(AV0Z20670512)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/67985882:_____/08:00083003
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - semiconductor technology; rare earth compounds; radiation detectors (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Journal of Materials Science-Materials in Electronics
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Grym, Jan
- Zavadil, Jiří
- Žďánský, Karel
- Procházková, Olga
- Pekárek, Ladislav
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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is http://linked.open...avai/riv/vysledek
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