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  • Prvky vzácných zemin (REE) vykazují vysokou chemickou afinitu k většině druhů mělkých donorů, které se vyskytují v sloučeninách typu III-V. Přídavek REE do taveniny při LPE procesu vede tudíž k růstu čistých vrstev. Příspěvek obsahuje kvantitativní popis tohoto jevu, včetně odvození závislosti koncentrace donorů od obsahu REE. Vychází se ze zákonů zachování počtu atomů REE a donorů a z podmínky rovnováhy pro tvorbu/disociaci sloučenin REE. (cs)
  • Rare-earth elements (REE) show enhanced chemical affinity towards most species of the shaloow donors in III-V compounds. An admixture of REE in the LPE growth solution thus leads to purification of this produced layers. A quantitative description of this phenomenon is presented, deriving dependence of donor concentration on REE concentration. The model is based on conservation equations for REE and shaloow donor atoms and on the equilibrium condition of the formation/dissociation reactions for REE compounds.
  • Rare-earth elements (REE) show enhanced chemical affinity towards most species of the shaloow donors in III-V compounds. An admixture of REE in the LPE growth solution thus leads to purification of this produced layers. A quantitative description of this phenomenon is presented, deriving dependence of donor concentration on REE concentration. The model is based on conservation equations for REE and shaloow donor atoms and on the equilibrium condition of the formation/dissociation reactions for REE compounds. (en)
Title
  • Simulation of the effects of rare earth elements presence in the growth of III-V compound layers
  • Simulation of the effects of rare earth elements presence in the growth of III-V compound layers (en)
  • Simulace vlivu prvků vzácných zemin na růst vrstev sloučenin typu III-V (cs)
skos:prefLabel
  • Simulation of the effects of rare earth elements presence in the growth of III-V compound layers
  • Simulation of the effects of rare earth elements presence in the growth of III-V compound layers (en)
  • Simulace vlivu prvků vzácných zemin na růst vrstev sloučenin typu III-V (cs)
skos:notation
  • RIV/67985882:_____/07:00087817!RIV08-AV0-67985882
http://linked.open.../vavai/riv/strany
  • 528;530
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/06/0153), Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika
  • 10
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 449978
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/07:00087817
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • semiconductor technology; rare earth compounds; getters (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • RO - Rumunsko
http://linked.open...ontrolniKodProRIV
  • [7210FC652EE7]
http://linked.open...i/riv/nazevZdroje
  • Optoelectronics and Advanced Materials - Rapid Communications
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 1
http://linked.open...iv/tvurceVysledku
  • Procházková, Olga
  • Šrobár, Fedor
http://linked.open...n/vavai/riv/zamer
issn
  • 1842-6573
number of pages
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