About: Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Hlavním cílem práce bylo porovnání nitridu křemíku připraveného metodami LP CVD a MW PE CVD ze silanu a čpavku s ohledem na možnost pasivace c-Si povrchových vrstev. Vlastnosti vrstev nitridu křemíku byly studovány metodami SPV, FTIR a SIMS. Průměrná hodnota difuzní délky minoritních nosičů v Si vzorcích s LP CVD nitridem byla kratší a závisela na místě v reaktoru. (cs) The main purpose of this work was the comparison of the silicon nitride prepared by the LP CVD and by the MW PE CVD from silane and ammonia gases with respect to the possibility of passivation c-Si surface layer. The properties of the silicon nitride films were studied by the surface photovoltage (SPV), FTIR and SIMS methods. The average value of the diffusion length of minority carriers in the Si samples with the LP CVD nitride was shorter and dependent on the location in the reactor. The main purpose of this work was the comparison of the silicon nitride prepared by the LP CVD and by the MW PE CVD from silane and ammonia gases with respect to the possibility of passivation c-Si surface layer. The properties of the silicon nitride films were studied by the surface photovoltage (SPV), FTIR and SIMS methods. The average value of the diffusion length of minority carriers in the Si samples with the LP CVD nitride was shorter and dependent on the location in the reactor. (en)
Title	Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers (en) Vliv vrstev nitridu křemíku na difuzní délku minoritních nosičů v Si (cs)
skos:prefLabel	Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers (en) Vliv vrstev nitridu křemíku na difuzní délku minoritních nosičů v Si (cs)
skos:notation	RIV/67985882:_____/06:00083592!RIV08-AV0-67985882
http://linked.open.../vavai/riv/strany	960;962
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(AV0Z20670512)
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Lörinčík, Jan
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	479502
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/06:00083592
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	solar cells; hydrogen; plasma (en)
http://linked.open.../riv/klicoveSlovo	hydrogen plasma solar cells
http://linked.open...ontrolniKodProRIV	[78CFDA6AD2E6]
http://linked.open...v/mistoKonaniAkce	Dresden
http://linked.open...i/riv/mistoVydani	München
http://linked.open...i/riv/nazevZdroje	Proceedings of the International Conference Twentyfirst European Photovoltaic Solar Energy
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...UplatneniVysledku	2006
http://linked.open...iv/tvurceVysledku	Toušek, J. Toušková, J. Poruba, A. Lorinčík, Jan Bařinka, R. Hlídek, P.
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2006-09-04 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Materiály, struktury, systémy a signály v elektronice, optoelektronice a fotonice
number of pages	3 (xsd:int)
http://purl.org/ne...btex#hasPublisher	WIP-Renewable Energies
https://schema.org/isbn	3-936338-20-5
is http://linked.open...avai/riv/vysledek of	Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers Influence of silicon nitride layers on the minority carrier diffusion length in silicon wafers

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