About: Effect of silicon nitride layers on the minority carrier diffusion length in c-Si wafers

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Hlavním cílem práce bylo porovnání nitridu křemíku připraveného metodami LP CVD a MW PE CVD ze silanu a čpavku s ohledem na možnost pasivace c-Si povrchových vrstev. Vlastnosti vrstev nitridu křemíku byly studovány metodami SPV, FTIR a SIMS. Průměrná hodnota difuzní délky minoritních nosičů v Si vzorcích s LP CVD nitridem byla kratší a závisela na místě v reaktoru. (cs) The main purpose of this work was the comparison of the silicon nitride prepared by the LP CVD and by the MW PE CVD from silane and ammonia gases with respect to the possibility of passivation c-Si surface layer. The properties of the silicon nitride films were studied by the surface photovoltage (SPV), FTIR and SIMS methods. The average value of the diffusion length of minority carriers in the Si samples with the LP CVD nitride was shorter and dependent on the location in the reactor. The main purpose of this work was the comparison of the silicon nitride prepared by the LP CVD and by the MW PE CVD from silane and ammonia gases with respect to the possibility of passivation c-Si surface layer. The properties of the silicon nitride films were studied by the surface photovoltage (SPV), FTIR and SIMS methods. The average value of the diffusion length of minority carriers in the Si samples with the LP CVD nitride was shorter and dependent on the location in the reactor. (en)
Title	Effect of silicon nitride layers on the minority carrier diffusion length in c-Si wafers Vliv vrstev nitridu křemíku na difuzní délku minoritních nosičů v c-Si (cs) Effect of silicon nitride layers on the minority carrier diffusion length in c-Si wafers (en)
skos:prefLabel	Effect of silicon nitride layers on the minority carrier diffusion length in c-Si wafers Vliv vrstev nitridu křemíku na difuzní délku minoritních nosičů v c-Si (cs) Effect of silicon nitride layers on the minority carrier diffusion length in c-Si wafers (en)
skos:notation	RIV/67985882:_____/06:00082822!RIV07-AV0-67985882
http://linked.open.../vavai/riv/strany	113716.1;113716.6
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(LC06041), Z(AV0Z20670512), Z(MSM0021620834)
http://linked.open...iv/cisloPeriodika	11
http://linked.open...vai/riv/dodaniDat	2007
http://linked.open...aciTvurceVysledku	Lörinčík, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	473197
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/06:00082822
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	solar cells; hydrogen; plasma (en)
http://linked.open.../riv/klicoveSlovo	hydrogen plasma solar cells
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[47E280544DFC]
http://linked.open...i/riv/nazevZdroje	Journal of Applied Physics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Preparation, modification and characterization of materials by energetic radiation.
http://linked.open...UplatneniVysledku	2006
http://linked.open...v/svazekPeriodika	100
http://linked.open...iv/tvurceVysledku	Toušek, J. Toušková, J. Poruba, A. Lorinčík, Jan Hlídek, P.
http://linked.open...n/vavai/riv/zamer	Materiály, struktury, systémy a signály v elektronice, optoelektronice a fotonice Condensed Matter Physics – New Materials and Technologies
issn	0021-8979
number of pages	6 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Effect of silicon nitride layers on the minority carrier diffusion length in c-Si wafers Effect of silicon nitride layers on the minority carrier diffusion length in c-Si wafers

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