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  • The study of three different electrode matallizations with the aim to form the Schottky barrier contact on the bulk LEC SI InP:Fe and InP:Fe+Zn wafers. Results have shown that no one of used matallization performed expected blocking behaviour. However detctor structure with Ti/Pt/Au contact attained a relatively good energy resolution of 7.0 keV (in FWHM) and the charge collection efficiency higher than 83% for 122 keV γ-photons at lowered temperature of 255K.
  • The study of three different electrode matallizations with the aim to form the Schottky barrier contact on the bulk LEC SI InP:Fe and InP:Fe+Zn wafers. Results have shown that no one of used matallization performed expected blocking behaviour. However detctor structure with Ti/Pt/Au contact attained a relatively good energy resolution of 7.0 keV (in FWHM) and the charge collection efficiency higher than 83% for 122 keV γ-photons at lowered temperature of 255K. (en)
  • Studium tří různých způsobů metalizace SI InP:Fe a SI InP:Fe+Zn objemových materiálů připravovaných metodou LEC za účelem realizace detektorové struktury s Schottkyho bariérou. Žádný ze studovaných elektrodových systémů nevykázal požadované blokovací vlastnosti, ale detektorová struktura s kontaktem Ti/Pt/Au dosáhla relativně dobrého energetického rozlišení 7.0 keV a sběrná účinnost byla pro γ záření (122 keV) při teplotě 255K větší než 83%. (cs)
Title
  • Performance study of bulk semi-insulating InP radiation detectors with different electrode metallizations
  • Radiační detektory na bázi semiizolačního InP: technologie elektrod (cs)
  • Performance study of bulk semi-insulating InP radiation detectors with different electrode metallizations (en)
skos:prefLabel
  • Performance study of bulk semi-insulating InP radiation detectors with different electrode metallizations
  • Radiační detektory na bázi semiizolačního InP: technologie elektrod (cs)
  • Performance study of bulk semi-insulating InP radiation detectors with different electrode metallizations (en)
skos:notation
  • RIV/67985882:_____/06:00043175!RIV07-AV0-67985882
http://linked.open.../vavai/riv/strany
  • 161;164
http://linked.open...avai/riv/aktivita
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  • P(GA102/06/0153), Z(AV0Z20670512)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 491764
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  • RIV/67985882:_____/06:00043175
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  • semiconductor technology; radiation detection; indium compounds (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [53A7641D8C85]
http://linked.open...v/mistoKonaniAkce
  • Smolenice
http://linked.open...i/riv/mistoVydani
  • Bratislava
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  • ASDAM'06. Conference Proceedings of the 6th International Conference on Advanced Semiconductor Devices and Microsystems
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Procházková, Olga
  • Dubecký, F.
  • Nečas, V.
  • Zat´ko, B.
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
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  • Slovenská technická univerzita v Bratislave
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  • 1-4244-0396-0
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