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Description
  • Purified InP was grown by Czochralski technique with admixture of Ta into the growth melt and then was converted to semi-insulating state by annealing. Temperature dependent Hall measurements were carried out and activation energy of the impurity responsible for semi-insulating state was determined as 0.75 eV from the conduction band. Particle detectors were fabricated by metal deposition on InP wafers 0.25 mm thickness.
  • Purified InP was grown by Czochralski technique with admixture of Ta into the growth melt and then was converted to semi-insulating state by annealing. Temperature dependent Hall measurements were carried out and activation energy of the impurity responsible for semi-insulating state was determined as 0.75 eV from the conduction band. Particle detectors were fabricated by metal deposition on InP wafers 0.25 mm thickness. (en)
  • Vyčištěný InP byl připraven technikou Czochralského s přísadou Ta v tavenině a pak byl žíháním převeden do semiizolačního stavu. Byla provedena teplotně závislá Hallova měření a určena aktivační energie příměsi zodpovědné za semiizolační stav jako 0.75 eV od vodivostního pásu. Detektory částic byly vyrobeny deponováním kovu na destičky InP o tlouťce 0.25 mm. Detekční výkonnost byla měřena při pokojové teplotě spektroskopií amplitudy impulsů od alfa částic. (cs)
Title
  • Room-temperature particle detectors based on purified InP single-crystals converted to semi insulating state by annealing
  • Nechlazené detektory částic na bázi vyčištěného InP a převedeného do semiizolačního stavu žíháním (cs)
  • Room-temperature particle detectors based on purified InP single-crystals converted to semi insulating state by annealing (en)
skos:prefLabel
  • Room-temperature particle detectors based on purified InP single-crystals converted to semi insulating state by annealing
  • Nechlazené detektory částic na bázi vyčištěného InP a převedeného do semiizolačního stavu žíháním (cs)
  • Room-temperature particle detectors based on purified InP single-crystals converted to semi insulating state by annealing (en)
skos:notation
  • RIV/67985882:_____/05:00030408!RIV06-AV0-67985882
http://linked.open.../vavai/riv/strany
  • 1135;1139
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(IBS2067354), Z(AV0Z20670512)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 541493
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/05:00030408
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • radiation detection; semiconductor doping; crystal growth (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [09802B804ABC]
http://linked.open...v/mistoKonaniAkce
  • Puerto Rico
http://linked.open...i/riv/mistoVydani
  • Madison
http://linked.open...i/riv/nazevZdroje
  • 2005 IEEE Nuclear Science Symposium Conference Record. Nuclear Science Symposium and Medical Imaging Conference
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Kozak, Halina
  • Žďánský, Karel
  • Pekárek, Ladislav
  • Gorodynskyy, Vladyslav
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
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  • Omnipress
https://schema.org/isbn
  • 0-7803-9222-1
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