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  • High purity and Ce doped InP layers were grown on InP:Sn and InP:Fe substrates using liquid phase epitaxy with Tm2O3, Tm and Ce admixtures. All three types of epitaxial layers exhibit n to p type conductivity crossover at certain level RE element of RE-dioxide admixture. Ce was found to be the dominant acceptor impurity responsible for n to p conductivity type conversion in layers doped with Ce. Tm seems to be a good candidate for preparation of p-type InP based detector structures with a Schottky barier.
  • High purity and Ce doped InP layers were grown on InP:Sn and InP:Fe substrates using liquid phase epitaxy with Tm2O3, Tm and Ce admixtures. All three types of epitaxial layers exhibit n to p type conductivity crossover at certain level RE element of RE-dioxide admixture. Ce was found to be the dominant acceptor impurity responsible for n to p conductivity type conversion in layers doped with Ce. Tm seems to be a good candidate for preparation of p-type InP based detector structures with a Schottky barier. (en)
  • Vysoce čisté vrstvy InP dotované Ce byly připraveny na InP:Sn a InP:Fe substrátech metodou kapalné epitaxe s příměsí Tm2O3, Tm and Ce v tavenině. Všechny vrstvy vykazují změnu typu vodivosti z n na p po překročení určité koncentrace příměsi. Ce byl detekován jako hlavní akceptorová nečistota odpovědná za změnu vodivostního typu u vrstev dotovaných Ce. Tm se jeví jako vhodný kandidát pro přípravu epitaxních vrstev InP typu p a detektorových struktur se Schottkyho bariérou. (cs)
Title
  • Preparation of p-type InP layers for detection of radiation
  • Preparation of p-type InP layers for detection of radiation (en)
  • Příprava InP vrstev typu p pro detekci záření (cs)
skos:prefLabel
  • Preparation of p-type InP layers for detection of radiation
  • Preparation of p-type InP layers for detection of radiation (en)
  • Příprava InP vrstev typu p pro detekci záření (cs)
skos:notation
  • RIV/67985882:_____/05:00020801!RIV06-AV0-67985882
http://linked.open.../vavai/riv/strany
  • e959;e963
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/03/0379), P(KSK1010104), Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika
  • 1/2
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 538211
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/05:00020801
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • rare earth compounds; liquid phase epitaxial growth; III-V semiconductors (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [961409E05E29]
http://linked.open...i/riv/nazevZdroje
  • Journal of Crystal Growth
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 275
http://linked.open...iv/tvurceVysledku
  • Grym, Jan
  • Zavadil, Jiří
  • Žďánský, Karel
  • Procházková, Olga
http://linked.open...n/vavai/riv/zamer
issn
  • 0022-0248
number of pages
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