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Description
  • InP single crystals were grown by liquid phase epitaxy on semi-insulating InP:Fe and n-type InP:Sn substrates with cerium, thulium and europium additions to the growth melt. Grown layers were examined by low-temperature photoluminescence spectroscopy, C-V measurements and temperature dependent Hall measurements. All layers exhibit the change of electrical conductivity from n to p at certain RE concentration in the melt.
  • InP single crystals were grown by liquid phase epitaxy on semi-insulating InP:Fe and n-type InP:Sn substrates with cerium, thulium and europium additions to the growth melt. Grown layers were examined by low-temperature photoluminescence spectroscopy, C-V measurements and temperature dependent Hall measurements. All layers exhibit the change of electrical conductivity from n to p at certain RE concentration in the melt. (en)
  • Monokrystalické epitaxní vrstvy InP připravené na semiizolačních (InP:Fe) substrátech a substrátech s n-typem vodivosti (InP:Sn) byly pěstovány s přidáním ceria, tulia a europia do růstové taveniny. Vrstvy byly vyšetřovány pomocí nízkoteplotní fotoluminescenční spektroskopie a měřením C-V závislostí a teplotních závislostí Hallova jevu. Všechny vrstvy vykazují změnu typu elektrické vodivosti z n na p při určité koncentraci vzácných zemin v tavenině. (cs)
Title
  • Characterization of InP epitaxial layers for use in radiation detection
  • Charakterizace epitaxních vrstev InP, vhodných pro detekci ionizujícího záření (cs)
  • Characterization of InP epitaxial layers for use in radiation detection (en)
skos:prefLabel
  • Characterization of InP epitaxial layers for use in radiation detection
  • Charakterizace epitaxních vrstev InP, vhodných pro detekci ionizujícího záření (cs)
  • Characterization of InP epitaxial layers for use in radiation detection (en)
skos:notation
  • RIV/67985882:_____/04:00105961!RIV/2005/GA0/A13005/N
http://linked.open.../vavai/riv/strany
  • 247;250
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/03/0379), P(IBS2067354), P(KSK1010104)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 557403
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/04:00105961
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • semiconductors;photoluminescence;galvanomagnetic effects (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [A61406BE1E1D]
http://linked.open...v/mistoKonaniAkce
  • Smolenice
http://linked.open...i/riv/mistoVydani
  • Piscataway
http://linked.open...i/riv/nazevZdroje
  • ASDAM'2004. Proceedings of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Zavadil, Jiří
  • Kozak, Halina
  • Žďánský, Karel
  • Procházková, Olga
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
number of pages
http://purl.org/ne...btex#hasPublisher
  • IEEE
https://schema.org/isbn
  • 0-7803-8535-7
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